Datasheet > JANHCB2N2484

JANHCB2N2484

更新时间： 2024-11-02 22:05:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体半导体晶体管
页数	文件大小	规格书
19页	115K
描述
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

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JANHCB2N2484 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 31 November 2000.

INCH-POUND

MIL-PRF-19500/376E

31 August 2000

SUPERSEDING

MIL-PRF-19500/376D

21 August 1998

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.

Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of

product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and

UB), and figures 4 and 5 (die).

1.3 Maximum ratings.

Types

P_T

V_CBO

V_EBO

V_CEO

I_C

T_Jand T_STG

R_qJA

R_qJC

T_A= +25°C

V dc

mA dc

°C

°C/W

2N2484

2N2484UA

2N2484UB

500 (1)

650 (2)

500 (1)

-65 to +200

325

210

325

146

160

146

(1) Derate linearly at 3.08 mW/°C above T_A= +37.5°C

(2) Derate linearly at 4.76 mW/°C above T_A= +63.5°C.

1.4 Primary electrical characteristics.

h_fe

C_obo

|h_fe|2

V_CE(sat)(1)

Limits

V_CE= 5 V dc

I_C= 1 mA dc

f = 1 kHz

I_E= 0

V_CB= 5 V dc

100 kHz £ f £ 1 MHz

I_C= 1.0 mA dc

I_B= 0.1 mA dc

I_C= 500 mA dc

V_CE= 5 V dc

f = 30 MHz

V dc

0.3

Min

Max

250

900

2.0

7.0

5.0

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

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与JANHCB2N2484相关器件

型号	品牌	获取价格	描述	数据表
JANHCB2N2907A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N2904	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JANHCBF2N2906A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N2907A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N7262	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
JANHCBF2N7382	MICROSEMI	获取价格	Transistor
JANHCBF2N7389	MICROSEMI	获取价格	Transistor
JANHCC1N4148	SENSITRON	获取价格	Small Signal/Switching Diodes
JANHCC1N5968	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5968C	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2

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