Datasheet > JANHCC1N6637C

JANHCC1N6637C

更新时间： 2024-11-04 10:25:47

品牌	Logo	应用领域
CDI-DIODE		测试二极管
页数	文件大小	规格书
26页	186K
描述
DIODE 5.1 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regulator Diode

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 24 February 2005.

MIL-PRF-19500/356H

24 November 2004

SUPERSEDING

MIL-PRF-19500/356G

5 September 2003

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,

1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,

AND C AND D TOLERANCE SUFFIX DEVICES,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Four

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two

levels of product assurance for each unencapsulated device type die.

1.2 Physical dimensions. See figures 1 (axial leaded), 2 (surface mount), and 3 (die).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings herein (see 3.10) and as follows:

P_Tat

T_L= +65°C

L = .375 inch

(9.53 mm)

1N4954

P_Tat

T_L= +25°C

L = .375 inch (9.53

mm)

P_Tat

T_EC= +125°C

T_Jand T_STG

Barometric pressure

reduced (high altitude

operation)

1N5968,

1N5969,

1N4954US

through

1N4954 through

1N4996

1N4954 through

1N4996

through

1N4996

1N6632 through

1N6637

1N4996US

N5968US,

1N5968,

1N5969,

1N5968,

1N5969,

1N5969US,

1N6632US through

1N6637US

1N6632 through

1N6637

including US suffix

1N6632 through

1N6637

including US suffix

5 W (1)

5 W (2)

5 W (3)

8 mHg

-65°C to +175°C

(1) Derate: See figure 4 herein.

(2) Derate: See figure 5 herein.

(3) Derate: See figures 5, 6 and 7 herein.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at http://assist.daps.dla.mil..

AMSC N/A

FSC 5961.

12 3 4 5 6 7...26

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与JANHCC1N6637C相关器件

型号	品牌	获取价格	描述	数据表
JANHCC1N6637D	CDI-DIODE	获取价格	Zener Diode, 5.1V V(Z), 1%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N914	SENSITRON	获取价格	Small Signal/Switching Diodes
JANHCC1N984D	MICROSEMI	获取价格	Zener Diode, 91V V(Z), 1%, 0.4W,
JANHCC2N2222A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| TO-18
JANHCCD6675	CDI-DIODE	获取价格	Rectifier Diode,
JANHCCD6677	CDI-DIODE	获取价格	Rectifier Diode,
JANHCCD821	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, Silicon, DIE-3
JANHCCD821A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, Silicon, DIE-3
JANHCCD823	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, Silicon, DIE-3
JANHCCD823A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, Silicon, DIE-3

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