Datasheet > JANHCB2N2907A

JANHCB2N2907A

更新时间： 2024-11-04 10:29:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
35页	798K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3

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JANHCB2N2907A 数据手册

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 16 May 2013.

INCH-POUND

MIL-PRF-19500/291U

16 February 2013

SUPERSEDING

MIL-PRF-19500/291T

23 September 2011

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,

TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA,

2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC,

2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN,

JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,

JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD,

JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two

levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA)

level designators “M”, “D”, “P“, “L” “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices which

have passed RHA requirements.

1.2 Physical dimensions. See figure 1 (similar to a TO-18), figure 2, (surface mount case outlines UA, figure 3

UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to fourth pad), UBN (3-pin,

isolated metal lid), and UBCN (3-pin, isolated ceramic lid) and figures 4, and 5 (JANHC and JANKC).

1.3 Maximum ratings. Unless otherwise specified T_A= +25°C.

Types

T and T

CBO

EBO

CEO

STG

mA dc

600

V dc

°C

All devices

-65 to +200

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST Online

database at https://assist.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...35

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与JANHCB2N2907A相关器件

型号	品牌	获取价格	描述	数据表
JANHCBF2N2904	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JANHCBF2N2906A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N2907A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N7262	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
JANHCBF2N7382	MICROSEMI	获取价格	Transistor
JANHCBF2N7389	MICROSEMI	获取价格	Transistor
JANHCC1N4148	SENSITRON	获取价格	Small Signal/Switching Diodes
JANHCC1N5968	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5968C	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5968C	CDI-DIODE	获取价格	Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2

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