Datasheet > JANHCBF2N7262

JANHCBF2N7262

更新时间： 2024-11-03 14:42:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
15页	155K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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JANHCBF2N7262 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	5.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.8 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

JANHCBF2N7262 数据手册

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 26 April 2011.

MIL-PRF-19500/657B

26 January 2011

SUPERSEDING

MIL-PRF-19500/657A

22 February 2000

* PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,

N AND P-CHANNEL, SILICON

VARIOUS TYPES JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for N and P-channel, enhancement-mode,

MOSFET, radiation hardened, power transistor die. Two levels of product assurance are provided for each device

type as specified in MIL-PRF-19500.

* 1.2 Physical dimensions. See figures 1 through 8 herein.

1.3 Maximum ratings. See the applicable performance specification sheet from table I herein.

2. APPLICABLE DOCUMENTS

* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

* DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

* DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

Semiconductor Devices, General Specification for.

* (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or

https://assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at https://assist.daps.dla.mil/.

AMSC N/A

FSC 5961

12 3 4 5 6 7...15

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与JANHCBF2N7262相关器件

型号	品牌	获取价格	描述	数据表
JANHCBF2N7382	MICROSEMI	获取价格	Transistor
JANHCBF2N7389	MICROSEMI	获取价格	Transistor
JANHCC1N4148	SENSITRON	获取价格	Small Signal/Switching Diodes
JANHCC1N5968	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5968C	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5968C	CDI-DIODE	获取价格	Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5968D	CDI-DIODE	获取价格	Zener Diode, 5.6V V(Z), 1%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5969C	CDI-DIODE	获取价格	Zener Diode, 6.2V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6632	MICROSEMI	获取价格	Zener Diode, 3.3V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6633	MICROSEMI	获取价格	Zener Diode, 3.6V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2

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