Datasheet > JANHCC1N6633

JANHCC1N6633

更新时间： 2024-11-04 06:10:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
22页	90K
描述
Zener Diode, 3.6V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2

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JANHCC1N6633 数据手册

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly

different in format due to electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion measures necessary to

comply with this revision shall be completed by 10 November 1999.

INCH POUND

MIL-PRF-19500/356F

10 August 1999

SUPERSEDING

MIL-S-19500/356E

11 November 1996

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR

TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,

1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,

AND C AND D TOLERANCE SUFFIX DEVICES

JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Five levels of product

assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for

each unencapsulated device type die.

1.2 Physical dimensions. See figures 1, 2, 3, 4, and 5.

1.3 Maximum ratings. Maximum ratings are as shown in columns 8 and 10 of table IV herein, and as follows:

P_T= 5 W at T_L= +65°C, L = .375 inch (9.53 mm), derate 45 mW/°C above T_L= +65°C (1N4954 through 1N4996). 1/

P_T= 5 W at T_L= +25°C, L = .375 inch (9.53 mm), derate 33 mW/°C above T_L= +25°C (1N5968, 1N5969, 1N6632 through

1N6637). 1/

P_T= 5 W at T_EC= +125°C, derate 100 mW/°C above T_EC= +125°C for US suffix devices.

-55°C < T_op< +175°C (ambient); -65°C < T_STG< +175°C (ambient).

Barometric pressure reduced (high altitude operation): 8 mm Hg.

1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 12, and 14 of table IV herein,

and as follows:

_JL= 22°C/W (max) at L = .375 inch (9.53 mm) (1N4954 through 1N4996). 1/

_JL= 30°C/W (max) at L = .375 inch (9.53 mm) (1N5968, 1N5969, 1N6632 through 1N6637). 1/

_JEC= 7°C/W (max) (surface mount) (1N4954 through 1N4996).

_JEC= 10°C/W (max) (surface mount) (1N5968, 1N5969, 1N6632 through 1N6637).

1/ Does not apply to surface mount devices.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end

of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...22

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与JANHCC1N6633相关器件

型号	品牌	获取价格	描述	数据表
JANHCC1N6633C	CDI-DIODE	获取价格	Zener Diode, 3.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6633D	CDI-DIODE	获取价格	Zener Diode, 3.6V V(Z), 1%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6634	CDI-DIODE	获取价格	Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6634C	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6635	CDI-DIODE	获取价格	Zener Diode, 4.3V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6635C	CDI-DIODE	获取价格	Zener Diode, 4.3V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6635D	MICROSEMI	获取价格	Zener Diode, 4.3V V(Z), 1%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6636	CDI-DIODE	获取价格	Zener Diode, 4.7V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6636C	CDI-DIODE	获取价格	DIODE 4.7 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-2, Voltage Regulato
JANHCC1N6636D	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 1%, 5W, Silicon, Unidirectional, DIE-2

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