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JANHCC1N5968C

更新时间： 2024-11-03 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
22页 90K
描述
Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2

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JANHCC1N5968C 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIE
包装说明：S-XUUC-N2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.91
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
最大动态阻抗：1 ΩJESD-30 代码：S-XUUC-N2
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：SQUARE封装形式：UNCASED CHIP
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
参考标准：MIL-19500/356H标称参考电压：5.6 V
子类别：Voltage Reference Diodes表面贴装：YES
技术：ZENER端子面层：TIN LEAD
端子形式：NO LEAD端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：2%
工作测试电流：220 mABase Number Matches：1

JANHCC1N5968C 数据手册

 浏览型号JANHCC1N5968C的Datasheet PDF文件第2页浏览型号JANHCC1N5968C的Datasheet PDF文件第3页浏览型号JANHCC1N5968C的Datasheet PDF文件第4页浏览型号JANHCC1N5968C的Datasheet PDF文件第5页浏览型号JANHCC1N5968C的Datasheet PDF文件第6页浏览型号JANHCC1N5968C的Datasheet PDF文件第7页 
This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly  
different in format due to electronic conversion processes. Actual technical content will be the same.  
The documentation and process conversion measures necessary to  
comply with this revision shall be completed by 10 November 1999.  
INCH POUND  
MIL-PRF-19500/356F  
10 August 1999  
SUPERSEDING  
MIL-S-19500/356E  
11 November 1996  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR  
TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,  
1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,  
AND C AND D TOLERANCE SUFFIX DEVICES  
JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Five levels of product  
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for  
each unencapsulated device type die.  
1.2 Physical dimensions. See figures 1, 2, 3, 4, and 5.  
1.3 Maximum ratings. Maximum ratings are as shown in columns 8 and 10 of table IV herein, and as follows:  
PT = 5 W at TL = +65°C, L = .375 inch (9.53 mm), derate 45 mW/°C above TL = +65°C (1N4954 through 1N4996). 1/  
PT = 5 W at TL = +25°C, L = .375 inch (9.53 mm), derate 33 mW/°C above TL = +25°C (1N5968, 1N5969, 1N6632 through  
1N6637). 1/  
PT = 5 W at TEC = +125°C, derate 100 mW/°C above TEC = +125°C for US suffix devices.  
-55°C < Top < +175°C (ambient); -65°C < TSTG < +175°C (ambient).  
Barometric pressure reduced (high altitude operation): 8 mm Hg.  
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 12, and 14 of table IV herein,  
and as follows:  
R
R
JL = 22°C/W (max) at L = .375 inch (9.53 mm) (1N4954 through 1N4996). 1/  
JL = 30°C/W (max) at L = .375 inch (9.53 mm) (1N5968, 1N5969, 1N6632 through 1N6637). 1/  
R
R
JEC = 7°C/W (max) (surface mount) (1N4954 through 1N4996).  
JEC = 10°C/W (max) (surface mount) (1N5968, 1N5969, 1N6632 through 1N6637).  
1/ Does not apply to surface mount devices.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,  
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end  
of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
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与JANHCC1N5968C相关器件

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JANHCC1N5968D CDI-DIODE

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 		Zener Diode, 5.6V V(Z), 1%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N5969C CDI-DIODE

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 		Zener Diode, 6.2V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6632 MICROSEMI

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 		Zener Diode, 3.3V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6633 MICROSEMI

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 		Zener Diode, 3.6V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6633C CDI-DIODE

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 		Zener Diode, 3.6V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6633D CDI-DIODE

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 		Zener Diode, 3.6V V(Z), 1%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6634 CDI-DIODE

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 		Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6634C MICROSEMI

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 		Zener Diode, 3.9V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6635 CDI-DIODE

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 		Zener Diode, 4.3V V(Z), 5%, 5W, Silicon, Unidirectional, DIE-2
JANHCC1N6635C CDI-DIODE

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 		Zener Diode, 4.3V V(Z), 2%, 5W, Silicon, Unidirectional, DIE-2

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