Datasheet > JANHCA1N985C

JANHCA1N985C

更新时间： 2024-11-03 14:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
27页	206K
描述
Zener Diode, 8.2V V(Z), 2%, 1W, Silicon, Unidirectional,

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JANHCA1N985C 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.6
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JESD-609代码：	e0	元件数量：	1
端子数量：	2	封装形式：	UNCASED CHIP
极性：	UNIDIRECTIONAL	最大功率耗散：	1 W
认证状态：	Qualified	参考标准：	MIL-19500/115K
标称参考电压：	8.2 V	表面贴装：	YES
技术：	ZENER	端子面层：	Tin/Lead (Sn/Pb)
端子位置：	UNSPECIFIED	最大电压容差：	2%
工作测试电流：	31 mA	Base Number Matches：	1

JANHCA1N985C 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 25 October 2006.

INCH-POUND

MIL-PRF-19500/117P

25 July 2006

SUPERSEDING

MIL-PRF-19500/117N

6 October 2005

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH

1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1

THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC

JANS level (see 6.4).

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall

consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator

diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided

for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for

each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and

as follows:

a. P_TL= 500 mW, (DO-35) at T_L= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). Derate I_Zto 0.0 mA dc at +175°C.

b. P_TEC= 500 mW, (DO-213AA) at T_EC= +125°C, derate to 0 at +175°C. -65°C ≤ T_J≤ +175°C; -65°C ≤ T_STG

+175°C.

≤

c. P_T(PCB)= 400mW, T_A= 55°C.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...27

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与JANHCA1N985C相关器件

型号	品牌	获取价格	描述	数据表
JANHCA1N985D	MICROSEMI	获取价格	Zener Diode, 8.2V V(Z), 2%, 1W, Silicon, Unidirectional,
JANHCA1N986B	CDI-DIODE	获取价格	Zener Diode,
JANHCA1N986C	CDI-DIODE	获取价格	Zener Diode,
JANHCA2N2484	STMICROELECTRONICS	获取价格	SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB
JANHCA2N3439	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 350V V(BR)CEO \| 1A I(C) \| TO-5
JANHCA2N3440	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 1A I(C) \| TO-5
JANHCA2N3635	MICROSEMI	获取价格	Transistor
JANHCA2N3636	MICROSEMI	获取价格	Transistor
JANHCA2N3637	MICROSEMI	获取价格	Transistor
JANHCA2N3743	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 50MA I(C) \| TO-39

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