Datasheet > JAN2N5794

JAN2N5794

更新时间： 2024-11-28 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
14页	86K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 40V V(BR)CEO \| 600MA I(C) \| TO-78

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JAN2N5794 数据手册

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly

different in format due to electronic conversion processes. Actual technical content will be the same.

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 10 November 1998.

INCH-POUND

MIL-PRF-19500/495C

10 August 1998

SUPERSEDING

MIL-PRF-19500/495B

6 March 1998

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN,

SILICON, TYPES 2N5793, 2N5794 AND 2N5794U, JAN, JANTX, AND JANTXV

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the requirements for two electrically isolated, unmatched, NPN, silicon, transistors as one dual

unit . Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 (similar to T0-99) and 2 (surface mount).

1.3 Maximum ratings. T_A= +25 C, unless otherwise specified.

= +25 C

and T

CBO

CEO

EBO

STG

One section

Total device

mA dc

600

V dc

6.0

0.5

0.6

-65 to +200

1/ For T_A25 C, derate linearly 2.86 mW/ C one section, 3.43 mW/ C total.

Switching

obo

= 10 V dc

= 20 V dc

off

I = 20 mA dc

= 0

f = 100 MHz

100 kHz

1 MHz

Minimum

Maximum

2.0

10.0

8.0

310

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...14

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与JAN2N5794相关器件

型号	品牌	获取价格	描述	数据表
JAN2N5794U	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 40V V(BR)CEO \| 600MA I(C) \| LLCC
JAN2N5795	MICROSEMI	获取价格	PNP DUAL SILICON TRANSISTOR
JAN2N5796	MICROSEMI	获取价格	PNP DUAL SILICON TRANSISTOR
JAN2N5796	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SIMILAR
JAN2N5796AU	MICROSEMI	获取价格	暂无描述
JAN2N5796AUC	MICROSEMI	获取价格	暂无描述
JAN2N5796U	MICROSEMI	获取价格	PNP DUAL SILICON TRANSISTOR
JAN2N5926	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 50A I(C) \| TO-210AE
JAN2N5927	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 100A I(C) \| TO-114
JAN2N599	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 500MA I(C) \| TO-5