型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N2025 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-209AC, | |
JAN2N2026 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-209AC, | |
JAN2N2029 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 70000mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-209AC, | |
JAN2N2030 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 70000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC, | |
JAN2N2060 | MICROSEMI |
获取价格 |
UNITIZED DUAL NPN SILICON TRANSISTOR | |
JAN2N2060 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-77, | |
JAN2N2060L | MICROSEMI |
获取价格 |
UNITIZED DUAL NPN SILICON TRANSISTOR | |
JAN2N2079A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 15A I(C) | TO-36 | |
JAN2N2150 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
JAN2N2151 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 2 |