Datasheet > JAN2N2221AUA

JAN2N2221AUA

更新时间： 2024-10-03 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
24页	148K
描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| SMT

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JAN2N2221AUA 数据手册

INCH-POUND

The documentation and process

conversion measures necessary to comply

with this revision shall be completed by

15 May 2002.

MIL-PRF-19500/255N

15 February 2002

SUPERSEDING

MIL-PRF-19500/255M

20 March 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,

TYPES 2N2221A, 2N2221AL, 2N2222A, 2N2222AL, 2N2221AUA 2N2222AUA,

2N2221AUB, AND 2N2222AUB, JAN, JANJ, JANTX, JANTXV, JANTXVD, JANTXVH,

JANTXVM, JANTXVR, JANS, JANSD, JANSH, JANSM, JANSR, JANHC, JANHCM,

JANHCD, JANHCR, JANHCH, JANKC, JANKCM, JANKCD, JANKCR, AND JANKCH

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Five

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two

levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness

assurance (RHA) to four radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance

levels. RHA level designators “M”, “D”, “R”, and “H” are appended to the device prefix to identify devices, which have

passed RHA requirements.

* 1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and

UB), and figures 4, 5, and 6 (JANHC and JANKC).

1.3 Maximum ratings.

P_T

Types

I_C

V_CBO

V dc

V_CEO

V dc

V_EBO

V dc

_OPand T_STG

T_A= +25°C

R_θ

mA dc

°C

°C/W

2N2221A, L,

2N2222A, L

(1) 0.5

800

-65 to +200

325

2N2221AUA,

2N2222AUA

(2) 0.65

800

-65 to +200

210

2N2221AUB,

2N2222AUB

(1) 0.50

800

-65 to +200

325

(1) Derate linearly 3.08 mW/°C above T_A= +37.5°C.

(2) Derate linearly 4.76 mW/°C above T_A= +63.5°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving

this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)

appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...24

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与JAN2N2221AUA相关器件

型号	品牌	获取价格	描述	数据表
JAN2N2221AUB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| CHIP
JAN2N2222A	MICROSEMI	获取价格	SMALL SIGNAL BIPOLAR NPN SILICON
JAN2N2222A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18,
JAN2N2222AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 4 PIN
JAN2N2222AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JAN2N2273	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 100MA I(C) \| TO-18
JAN2N2323	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
JAN2N2323A	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
JAN2N2323AN	MICROSEMI	获取价格	暂无描述
JAN2N2323AS	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER

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