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JAN2N1480 PDF预览

JAN2N1480

更新时间: 2024-01-29 19:53:42
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
2页 57K
描述
NPN SILICON MEDIUM POWER TRANSISTOR

JAN2N1480 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.78
Is Samacsys:NBase Number Matches:1

JAN2N1480 数据手册

 浏览型号JAN2N1480的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN SILICON MEDIUM POWER TRANSISTOR  
Qualified per MIL-PRF-19500/ 207  
Devices  
Qualified Level  
2N1479  
2N1480  
2N1481  
2N1482  
MAXIMUM RATINGS  
Ratings  
2N1479 2N1480  
Symbol 2N1481 2N1482 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
55  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
VCEO  
VCBO  
VEBO  
IC  
60  
100  
12  
1.5  
1.0  
1.0  
Base-Current  
Total Power Dissipation @ TA = 250C  
IB  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
0C  
TJ, T  
stg  
TO-5*  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
35  
R
qJC  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 50 mAdc  
40  
55  
Vdc  
Vdc  
2N1479, 2N1481  
2N1480, 2N1482  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
VEB = 1.5 Vdc, IC = 0.25 mAdc  
VEB = 1.5 Vdc, IC = 0.25 mAdc  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
VCB = 50 Vdc  
Emitter-Base Cutoff Current  
VEB = 12 Vdc  
60  
100  
2N1479, 2N1481  
2N1480, 2N1482  
V(BR)  
CEX  
5.0  
5.0  
mAdc  
mAdc  
2N1479, 2N1481  
2N1480, 2N1482  
ICBO  
10  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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