5秒后页面跳转
JAN2N1484 PDF预览

JAN2N1484

更新时间: 2024-02-17 14:46:08
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
4页 61K
描述
NPN SILICON MEDIUM POWER TRANSISTOR

JAN2N1484 数据手册

 浏览型号JAN2N1484的Datasheet PDF文件第2页浏览型号JAN2N1484的Datasheet PDF文件第3页浏览型号JAN2N1484的Datasheet PDF文件第4页 
TECHNICAL DATA  
NPN SILICON MEDIUM POWER TRANSISTOR  
Qualified per MIL-PRF-19500/ 207  
Devices  
Qualified Level  
JAN  
JANTX  
2N1483  
2N1484  
2N1485  
2N1486  
MAXIMUM RATINGS  
Ratings  
Symbol 2N1483 2N1484 Unit  
2N1485 2N1486  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
55  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
60  
100  
12  
Collector Current -- Continuous  
Total Power Dissipation  
3.0  
@ TA = 250C (1)  
@ TC = 250C (2)  
1.75  
25  
W
W
0C  
PT  
TO-8*  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
1) Derate linearly 0.010 W/0C for TA > 250C  
2) Derate linearly 0.143 W/0C for TC > 250C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Symbol  
V(BR)CEO  
V(BR)CBO  
V(BR)CEX  
Min.  
Max.  
Unit  
Vdc  
Vdc  
Vdc  
40  
55  
IC = 100 mAdc  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Base Breakdown Voltage  
IC = 100 mAdc  
60  
100  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Emitter Breakdown Voltage  
VEB = 1.5 Vdc, IC = 0.25 mAdc  
60  
100  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
VCB = 50 Vdc  
Emitter-Base Cutoff Current  
VEB = 12 Vdc  
15  
15  
mAdc  
mAdc  
2N1483, 2N1485  
2N1484, 2N1486  
ICBO  
15  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JAN2N1484 替代型号

型号 品牌 替代类型 描述 数据表
2N1484 MICROSEMI

完全替代

NPN SILICON MEDIUM POWER TRANSISTOR

与JAN2N1484相关器件

型号 品牌 获取价格 描述 数据表
JAN2N1485 APITECH

获取价格

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 P
JAN2N1485 MICROSEMI

获取价格

NPN SILICON MEDIUM POWER TRANSISTOR
JAN2N1486 MICROSEMI

获取价格

NPN SILICON MEDIUM POWER TRANSISTOR
JAN2N1487 ETC

获取价格

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 6A I(C) | TO-3
JAN2N1488 MICROSEMI

获取价格

Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal,
JAN2N1489 MICROSEMI

获取价格

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal,
JAN2N1490 ETC

获取价格

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 6A I(C) | TO-3
JAN2N1553A ETC

获取价格

TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-3
JAN2N1554A ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 15A I(C) | TO-3
JAN2N1555A ETC

获取价格

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 15A I(C) | TO-3