Datasheet > JAN2N1132L

JAN2N1132L

更新时间： 2024-11-26 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
9页	54K
描述
TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 600MA I(C) \| TO-39VAR

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JAN2N1132L 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 4 November 1999.

INCH-POUND

MIL-PRF-19500/177F

4 August 1999

SUPERSEDING

MIL-S-19500/177E

8 February 1995

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN AND JANTX

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon, low-power transistors. Two levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1, 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5).

1.3 Maximum ratings.

CBO

CEO

EBO

and T

= +25°C

V dc

5.0

mA dc

600

°C

2.0

0.6

-65 to +200

1/ Derate linearly 11.4 mW/°C for T ³ +25°C.

2/ Derate linearly 3.4 mW/°C for T ³ +25°C.

1.4 Primary electrical characteristics.

FE1

fe1

BE(SAT)

CE(SAT)

obo

I_C= 150 mA dc

I_B= 15 mA dc

f = 1 MHz

f = 20 MHz

I = 50 mA dc

= 10 V dc

= 5.0 V dc

= 150 mA dc

= 15 mA dc

= 150 mA dc

= 1.0 mA dc

f = 1 kHz

= 10 V dc

= 0

= 10 V dc

V dc

Min

Max

Min

Max

Min

Max

1.5

Min

Max

1.3

Min

Max

Min

2.5

3.0

Max

2N1131,L

2N1132,L

1/ Pulsed (see 4.4.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...9

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JAN2N1183B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 3A I(C) \| TO-8
JAN2N1184	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 3A I(C) \| TO-8
JAN2N1184A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 3A I(C) \| TO-8
JAN2N1184B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 3A I(C) \| TO-8
JAN2N1302	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300MA I(C) \| TO-5
JAN2N1303	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300MA I(C) \| TO-5
JAN2N1304	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300MA I(C) \| TO-5