是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.6 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-35 |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最大输出电流: | 0.5 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Qualified |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N6664 | MICROSEMI |
获取价格 |
Rectifier Diode, 1A, 100V V(RRM), | |
JAN1N6664R | MICROSEMI |
获取价格 |
Rectifier Diode, 1A, 100V V(RRM), | |
JAN1N6665R | MICROSEMI |
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Rectifier Diode, 1A, 150V V(RRM), | |
JAN1N6666 | MICROSEMI |
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Rectifier Diode, 1A, 200V V(RRM), | |
JAN1N6666R | MICROSEMI |
获取价格 |
Rectifier Diode, 1A, 200V V(RRM), | |
JAN1N6672R | MICROSEMI |
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Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN | |
JAN1N6674R | MICROSEMI |
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Rectifier Diode, 1 Phase, 2 Element, 15A, 500V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN | |
JAN1N6677UR-1 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED PACKAGE-2 | |
JAN1N6702 | CDI-DIODE |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon, HERMETIC SEALED, SIMILAR TO DO | |
JAN1N6702 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, |