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JAN1N6664R

更新时间： 2024-11-10 09:45:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
12页	113K
描述
Rectifier Diode, 1A, 100V V(RRM),

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JAN1N6664R 数据手册

* METRIC

The documentation and process conversion measures

necessary to comply shall with this document shall be completed

by 3 March 2011.

MIL-PRF-19500/594B

3 December 2010

SUPERSEDING

MIL-PRF-19500/594A

3 July 1998

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND

1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery power rectifier

diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-257AA).

1.3 Maximum ratings (for each leg).

Types

V_R

I_O(1)

I_FSM

t_rr

T_STG

and

V_RWM

T_C= +100°C

t_p= 8.3 ms

and

T_OP

V dc

100

150

200

A dc

1N6664,

+200°C

-65°C

1N6664R

1N6665,

1N6665R

1N6666,

1N6666R

(1) Derate linearly, 100 mA/°C from +100°C to +200°C.

Storage temperature: T_STG= -65°C to +200°C.

Operating temperature: T_J= -65°C to +200°C.

Barometric pressure reduced (altitude operation): 8 mm Hg.

R_θ_JC= 2.5°C/W maximum.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST Online

database at https://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...12

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