JAN1N5558TR

更新时间： 2024-11-07 23:05:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管局域网
页数	文件大小	规格书
3页	184K
描述
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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JAN1N5558TR 技术参数

生命周期：	Obsolete	零件包装代码：	DO-13
包装说明：	O-MALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.68
最小击穿电压：	191 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-202AA
JESD-30 代码：	O-MALF-W2	JESD-609代码：	e0
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	LONG FORM
极性：	UNIDIRECTIONAL	最大功率耗散：	1 W
认证状态：	Not Qualified	参考标准：	MIL-19500/500
最大重复峰值反向电压：	175 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

JAN1N5558TR 数据手册

1N5555

1N5557

1N5556

1N5558

1500 WATT UNIDIRECTIONAL

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Transient Voltage Suppressor (TVS) series for 1N5555 thru 1N5558

are JEDEC registered selections for unidirectional devices. All have the

same high Peak Pulse Power rating of 1500 W with extremely fast

response times. They are also available in military qualified selections as

described in the Features section herein. They are most often used for

protecting against transients from inductive switching environments,

induced RF effects, or induced secondary lightning effects as found in

lower surge levels of IEC61000-4-5. They are also very successful in

protecting airborne avionics and electrical systems. Since their response

time is virtually instantaneous, they can also protect from ESD and EFT per

IEC61000-4-2 and IEC61000-4-4.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Unidirectional TVS series for thru-hole mounting

• Working voltage (V_WM) range 30.5 V to 175 V

• Hermetic sealed DO-13 metal package

• JAN/TX/TXV military qualifications also available per

MIL-PRF-19500/500 by adding the JAN, JANTX, or

JANTXV prefix, e.g. JANTXV1N5555, etc.

• Suppresses transients up to 1500 watts @ 10/1000

µs (see Figure 1)

• Clamps transient in less than 100 pico seconds

•

Protection from switching transients and induced RF

• Protection from ESD and EFT per IEC 61000-4-2

and IEC 61000-4-4

• For bidirectional TVS in the same DO-13 package, see

separate data sheet for the 1N6036 – 1N6072A series

(also military qualified)

• Surface mount equivalent packages also available

from the SMCJ5.0 - SMCJ170CA or SMCG5.0 –

SMCG170C series in separate data sheet (consult

factory for other surface mount options)

• Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: 1N5555 to 1N5558

Class 2 & 3: 1N5555 to 1N5557

Class 4: 1N5555 to 1N5556

• Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

• Plastic axial-leaded equivalents available from the

Class 1: 1N5555 to 1N5557

1N6267 – 1N6303A series in separate data sheet

Class 2: 1N5555 to 1N5557

Inherently radiation hard as described in Microsemi

MicroNote 050

•

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• 1500 Watts for 10/1000 µs with repetition rate of 0.01% or

• CASE: DO-13 (DO-202AA), welded, hermetically

less* at lead temperature (T_L) 25^oC (see Figs 1, 2, & 4)

sealed metal and glass

• Operating & Storage Temperatures: -65^oto +175^oC

• FINISH: All external metal surfaces are Tin-Lead

plated and solderable per MIL-STD-750 method

2026

• THERMAL RESISTANCE: 50^oC/W junction to lead at

0.375 inches (10 mm) from body or 110^oC/W junction to

ambient when mounted on FR4 PC board with 4 mm²

copper pads (1oz) and track width 1 mm, length 25 mm

• POLARITY: Cathode connected to case and

polarity indicated by diode symbol

• DC Power Dissipation*: 1 Watt at T_L= +25^oC 3/8” (10

• MARKING: Part number and polarity diode symbol

• WEIGHT: 1.4 grams. (Approx)

mm) from body (see derating in Fig 3)

• Forward surge current: 200 Amps for 8.3ms half-sine

• TAPE & REEL option: Standard per EIA-296 (add

wave at T_A= +25^oC

“TR” suffix to part number)

• Solder Temperatures: 260 ^oC for 10 s (maximum)

• See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

11-06-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与JAN1N5558TR相关器件

型号	品牌	获取价格	描述	数据表
JAN1N5600	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, Silicon, DE, 2 PIN
JAN1N5603	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, Silicon, DF, 2 PIN
JAN1N5610	MICROSEMI	获取价格	POWER ZENER RECTIFIER
JAN1N5611	MICROSEMI	获取价格	POWER ZENER RECTIFIER
JAN1N5612	MICROSEMI	获取价格	POWER ZENER RECTIFIER
JAN1N5613	MICROSEMI	获取价格	POWER ZENER RECTIFIER
JAN1N5614	MICROSEMI	获取价格	MILITARY RECTIFIERS
JAN1N5614	SENSITRON	获取价格	HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER
JAN1N5614	VMI	获取价格	Rectifier Diode, 1 Element, 1.5A, 200V V(RRM), Silicon,
JAN1N5614UL	SENSITRON	获取价格	暂无描述

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