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JAN1N5617US

更新时间： 2024-11-08 19:25:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 129K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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JAN1N5617US 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, GLASS PACKAGE-2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.26
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.6 VJESD-30 代码：O-LELF-R2
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Qualified
参考标准：MIL-19500/429J最大重复峰值反向电压：400 V
最大反向恢复时间：0.15 µs子类别：Rectifier Diodes
表面贴装：YES端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

JAN1N5617US 数据手册

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1N5615US thru 1N5623US  
SURFACE MOUNT VOIDLESS-  
HERMETICALLY SEALED FAST  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-  
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot  
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak  
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in axial-leaded package configurations for thru-hole mounting (see  
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous  
other rectifier products to meet higher and lower current ratings with various  
recovery time speed requirements including fast and ultrafast device types in both  
through-hole and surface mount packages.  
Package “A”  
or D-5A  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount package series equivalent to the  
JEDEC registered 1N5615 to 1N5623 series  
•
•
•
Fast recovery 1 Amp rectifiers 200 to 1000 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
Low thermal resistance  
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/429  
•
Controlled avalanche with peak reverse power  
capability  
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N5615 thru 1N5623)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Junction & Storage Temperature: -65oC to +175oC  
Thermal Resistance: 13oC/W junction to end cap  
Thermal Impedance: 4.5oC/W @ 10 ms heating time  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
TERMINATIONS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish. Note: Previous inventory  
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.  
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 55ºC  
•
•
•
•
MARKING & POLARITY: Cathode band only  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 193 mg  
•
•
Forward Surge Current: 30 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
See package dimensions and recommended pad  
layout on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
IO @ TA  
FORWAR  
D
VOLTAGE  
(MAX.)  
VF @ 3A  
REVERSE  
CURRENT  
(MAX.)  
CAPACITANCE MAXIMUM  
REVERSE  
RECOVERY  
(MAX.)  
(NOTE 3)  
trr  
(MAX.)  
C @ VR =12 V  
f=1 MHz  
SURGE  
CURRENT  
IFSM  
REVERSE  
VOLTAGE  
VRWM  
TYPE  
V
BR @ 50μA  
IR @ VRWM  
(NOTE 1)  
(NOTE 2)  
AMPS  
VOLTS  
VOLTS  
AMPS  
VOLTS  
pF  
ns  
μA  
50oC  
1.00  
1.00  
1.00  
1.00  
1.00  
100oC  
25oC 100oC  
1N5615US  
1N5617US  
1N5619US  
1N5621US  
1N5623US  
200  
400  
600  
800  
1000  
220  
440  
660  
880  
1100  
.750  
.750  
.750  
.750  
.750  
.8 MIN.  
.5  
.5  
.5  
.5  
.5  
25  
25  
25  
25  
25  
45  
35  
25  
20  
15  
25  
25  
25  
25  
25  
150  
150  
250  
300  
500  
1.6  
MAX.  
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,  
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal  
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals  
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250 A  
Copyright © 2009  
10-06-2009 REV E; SD47A.pdf  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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JAN1N5617US 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N5617US MICROSEMI

完全替代

 Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
1N5617US MICROSEMI

功能相似

 Fast Rectifier (100-500ns)

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