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JAN1N5618US PDF预览

JAN1N5618US

更新时间： 2024-09-19 21:10:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 130K
描述
Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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JAN1N5618US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：HERMETIC SEALED, GLASS PACKAGE-2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.22其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
元件数量：1端子数量：2
最大输出电流：1 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Qualified
参考标准：MIL-19500/427K最大反向恢复时间：2 µs
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JAN1N5618US 数据手册

 浏览型号JAN1N5618US的Datasheet PDF文件第2页浏览型号JAN1N5618US的Datasheet PDF文件第3页 
1N5614US thru 1N5622US  
VOIDLESS-HERMETICALLY-SEALED  
SURFACE MOUNT STANDARD  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” surface mount rectifier diode series is military qualified to MIL-  
PRF-19500/427 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse  
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction  
using an internal “Category I” metallurgical bond. These devices are also available in  
axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru  
1N5622). Microsemi also offers numerous other rectifier products to meet higher and  
lower current ratings with various recovery time speed requirements including fast and  
ultrafast device types in both through-hole and surface mount packages.  
Package “A”  
or D-5A  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount package series equivalent to the  
JEDEC registered 1N5614 to 1N5622 series  
•
•
•
Standard recovery 1 Amp rectifiers 200 to 1000 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
Low thermal resistance  
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/427  
•
Controlled avalanche with peak reverse power  
capability  
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N5614 thru 1N5622)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Junction & Storage Temperature: -65oC to +200oC  
Thermal Resistance: 13oC/W junction to end cap  
Thermal Impedance: 4.5oC/W @ 10 ms heating time  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
TERMINALS: End caps are Copper with Tin/Lead  
(Sn/Pb) finish. Note: Previous inventory had solid  
Silver end caps with Tin/Lead (Sn/Pb) finish.  
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 55ºC and 0.75 Amps @ TA = 100ºC  
•
•
•
•
MARKING & POLARITY: Cathode band only  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 193 mg  
•
•
Forward Surge Current: 30 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
See package dimensions and recommended pad  
layout on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
IO @ TA  
FORWARD  
VOLTAGE  
(MAX.)  
REVERSE  
CURRENT  
(MAX.)  
MAXIMUM  
SURGE  
CURRENT  
IFSM  
REVERSE  
RECOVERY  
(NOTE 3)  
trr  
REVERSE  
TYPE  
VF @ 3A  
VOLTAGE VRWM  
VBR @ 50μA  
IR @ VRWM  
(NOTE 2)  
AMPS  
VOLTS  
VOLTS  
VOLTS  
μA  
μs  
55oC  
25oC  
100oC  
25  
25  
25  
25  
25  
1N5614US  
1N5616US  
1N5618US  
1N5620US  
1N5622US  
200  
400  
600  
800  
1000  
220  
440  
660  
880  
1100  
0.5  
0.5  
0.5  
0.5  
0.5  
30  
30  
30  
30  
30  
2.0  
2.0  
2.0  
2.0  
2.0  
0.8 MIN.  
1.3 MAX.  
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,  
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal  
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals  
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A  
Copyright © 2009  
10-06-2009 REV D; SA7-45.pdf  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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JAN1N5618US 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N5618US MICROSEMI

完全替代

 Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
1N5618US MICROSEMI

功能相似

 Standard Rectifier (trr more than 500ns)

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