5秒后页面跳转
捷配首页

Datasheet > JANTXV1N5617US
JANTXV1N5617US PDF预览

JANTXV1N5617US

更新时间： 2024-10-02 19:25:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 129K
描述
Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

阅读下载

中文翻译

获取价格

JANTXV1N5617US 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, GLASS PACKAGE-2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.24
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
元件数量：1端子数量：2
最大输出电流：1 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
认证状态：Qualified参考标准：MIL-19500/429J
最大反向恢复时间：0.15 µs表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：WRAP AROUND
端子位置：ENDBase Number Matches：1

JANTXV1N5617US 数据手册

 浏览型号JANTXV1N5617US的Datasheet PDF文件第2页浏览型号JANTXV1N5617US的Datasheet PDF文件第3页 
1N5615US thru 1N5623US  
SURFACE MOUNT VOIDLESS-  
HERMETICALLY SEALED FAST  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-  
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot  
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak  
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in axial-leaded package configurations for thru-hole mounting (see  
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous  
other rectifier products to meet higher and lower current ratings with various  
recovery time speed requirements including fast and ultrafast device types in both  
through-hole and surface mount packages.  
Package “A”  
or D-5A  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount package series equivalent to the  
JEDEC registered 1N5615 to 1N5623 series  
•
•
•
Fast recovery 1 Amp rectifiers 200 to 1000 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
Low thermal resistance  
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/429  
•
Controlled avalanche with peak reverse power  
capability  
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N5615 thru 1N5623)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Junction & Storage Temperature: -65oC to +175oC  
Thermal Resistance: 13oC/W junction to end cap  
Thermal Impedance: 4.5oC/W @ 10 ms heating time  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
TERMINATIONS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish. Note: Previous inventory  
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.  
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 55ºC  
•
•
•
•
MARKING & POLARITY: Cathode band only  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 193 mg  
•
•
Forward Surge Current: 30 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
See package dimensions and recommended pad  
layout on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
IO @ TA  
FORWAR  
D
VOLTAGE  
(MAX.)  
VF @ 3A  
REVERSE  
CURRENT  
(MAX.)  
CAPACITANCE MAXIMUM  
REVERSE  
RECOVERY  
(MAX.)  
(NOTE 3)  
trr  
(MAX.)  
C @ VR =12 V  
f=1 MHz  
SURGE  
CURRENT  
IFSM  
REVERSE  
VOLTAGE  
VRWM  
TYPE  
V
BR @ 50μA  
IR @ VRWM  
(NOTE 1)  
(NOTE 2)  
AMPS  
VOLTS  
VOLTS  
AMPS  
VOLTS  
pF  
ns  
μA  
50oC  
1.00  
1.00  
1.00  
1.00  
1.00  
100oC  
25oC 100oC  
1N5615US  
1N5617US  
1N5619US  
1N5621US  
1N5623US  
200  
400  
600  
800  
1000  
220  
440  
660  
880  
1100  
.750  
.750  
.750  
.750  
.750  
.8 MIN.  
.5  
.5  
.5  
.5  
.5  
25  
25  
25  
25  
25  
45  
35  
25  
20  
15  
25  
25  
25  
25  
25  
150  
150  
250  
300  
500  
1.6  
MAX.  
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,  
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal  
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals  
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250 A  
Copyright © 2009  
10-06-2009 REV E; SD47A.pdf  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

下载PDF

JANTXV1N5617US 替代型号

型号 品牌 替代类型 描述 数据表
JANS1N5617US MICROSEMI

完全替代

 Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N5617US MICROSEMI

完全替代

 Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

与JANTXV1N5617US相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N5618 MICROSEMI

获取价格

 		MILITARY RECTIFIERS
JANTXV1N5618 VMI

获取价格

 		Rectifier Diode, 1 Element, 1.5A, 600V V(RRM), Silicon,
JANTXV1N5618UL SENSITRON

获取价格

 		Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTXV1N5618US MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N5619 MICROSEMI

获取价格

 		MILITARY RECTIFIERS
JANTXV1N5619 SENSITRON

获取价格

 		Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N5619UL SENSITRON

获取价格

 		Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, MELF-2
JANTXV1N5619US SENSITRON

获取价格

 		Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N5620 MICROSEMI

获取价格

 		MILITARY RECTIFIERS
JANTXV1N5620UL SENSITRON

获取价格

 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2

与JANTXV1N5617US相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证