5秒后页面跳转
JAN1N5611 PDF预览

JAN1N5611

更新时间: 2024-01-14 01:44:48
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
5页 130K
描述
POWER ZENER RECTIFIER

JAN1N5611 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-XALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.41
Is Samacsys:N最小击穿电压:43.7 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-XALF-W2JESD-609代码:e0
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:3 W认证状态:Qualified
参考标准:MIL-19500/434C最大重复峰值反向电压:40.3 V
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JAN1N5611 数据手册

 浏览型号JAN1N5611的Datasheet PDF文件第2页浏览型号JAN1N5611的Datasheet PDF文件第3页浏览型号JAN1N5611的Datasheet PDF文件第4页浏览型号JAN1N5611的Datasheet PDF文件第5页 
580 Pleasant St.  
Watertown, MA 02472  
PH: (617) 926-0404  
FAX: (617) 924-1235  
1N5610  
1N5611  
1N5612, 1N5613  
Features  
·
·
·
1500 Watts for 1 ms Pulse Power Capability  
Small Physical Size  
Designed for MIL-STD-704A Applications  
POWER ZENER  
RECTIFIER  
JAN, JANTX, JANTXV  
TRANSIENT  
SUPPRESSOR  
DIODE  
Description  
Zener diodes with a high surge capability  
qualified to MIL-S-19500/434  
Absolute Maximum Ratings ( @ 25°C unless noted )  
1N5610  
1N5611  
200 A  
24.0 A  
4.8 A  
1N5612  
200 A  
19.0 A  
3.2 A  
1N5613  
200 A  
5.7 A  
Forward Surge Current,  
Zener Surge Current, @ 25C  
Zener Surge Current @ 150C  
Storage and Operating Temperature  
Zener Voltage  
200 A  
32.0 A  
5.5 A  
1.0 A  
-65C to + 175C  
See Electrical Characteristics  
See Graphs  
Surge Power  
Electrical Characteristics (T = 25°C unless otherwise noted)  
DEVICE  
TYPE  
Min. Zener  
Voltage d  
Vz @ 1Ma  
Max. Zener  
Voltage l  
Vz @ Is  
MAX.  
Reverse Leakage  
Current  
MAX.  
Forward V x  
@ 100 A  
Typical  
Temp.  
Coefficient  
IR @ VR  
Volts  
33.0  
43.7  
54.0  
191  
Volts  
Amps  
32.0  
24.0  
19.0  
5.7  
Volts  
30.5  
40.3  
49.0  
175  
Volts  
4.8  
4.8  
4.8  
4.8  
mA  
5.0  
5.0  
5.0  
5.0  
% / °C  
.093  
.094  
.096  
.100  
1N5610*  
1N5611*  
1N5612*  
1N5613*  
47.5  
63.5  
78.5  
265  
NOTES: * Available as JAN, JANTX and JANTXV  
d Duration of applied current £300 ms, Duty cycle £2%.  
l
Use a pulse which decays exponentially to 50 % of peak value during 1 ms. (See “ Pulse Waveform “ graph).  
x Peak Sinusoidal surge current of 8.3 ms duration, non repetitive  
MSC1061.PDF 5-21-99  
DSW1N5610 <-> (35436)  

与JAN1N5611相关器件

型号 品牌 描述 获取价格 数据表
JAN1N5612 MICROSEMI POWER ZENER RECTIFIER

获取价格

JAN1N5613 MICROSEMI POWER ZENER RECTIFIER

获取价格

JAN1N5614 MICROSEMI MILITARY RECTIFIERS

获取价格

JAN1N5614 SENSITRON HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER

获取价格

JAN1N5614 VMI Rectifier Diode, 1 Element, 1.5A, 200V V(RRM), Silicon,

获取价格

JAN1N5614UL SENSITRON 暂无描述

获取价格