是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.08 |
配置: | SINGLE | FET 技术: | JUNCTION |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J211D74Z | TI |
获取价格 |
RF SMALL SIGNAL |
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J211D74Z | FAIRCHILD |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
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J211-D74Z | ONSEMI |
获取价格 |
N 沟道 RF 晶体管 |
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J211D75Z | FAIRCHILD |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
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J211D75Z | TI |
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RF SMALL SIGNAL |
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J211-E3 | VISHAY |
获取价格 |
Transistor |
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J211J05Z | TI |
获取价格 |
RF SMALL SIGNAL |
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J211J18Z | TI |
获取价格 |
RF SMALL SIGNAL |
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J211J18Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
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J211L | VISHAY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-2 |
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