Datasheet > J211-E3

J211-E3

更新时间： 2024-02-18 01:48:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	55K
描述
Transistor

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技术参数
数据手册

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J211-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.82	FET 技术：	JUNCTION
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	125 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

J211-E3 数据手册

J/SSTJ210 Series

Vishay Siliconix

N-Channel JFETs

J210

J211

J212

SSTJ211

SSTJ212

PRODUCT SUMMARY

Part Number

V_GS(off)(V)

V_(BR)GSSMin (V) g_fsMin (mS) I_DSSMin (mA)

J210

–1 to –3

–2.5 to –4.5

–4 to –6

–25

J/SSTJ211

J/SSTJ212

FEATURES

BENEFITS

APPLICATIONS

D Excellent High Frequency Gain:

D Wideband High Gain

D High-Frequency Amplifier/Mixer

D Oscillator

J211/212, Gps 12 dB (typ) @ 400 MHz

D Very High System Sensitivity

D High Quality of Amplification

D High-Speed Switching Capability

D Very Low Noise: 3 dB (typ) @

D Sample-and-Hold

400 MHz

D Very Low Capacitance Switches

D Very Low Distortion

D High-Quality Low-Level Signal

D High ac/dc Switch Off-Isolation

D High Gain: A_V= 35 @ 100 mA

Amplification

DESCRIPTION

The J/SSTJ210 Series n-channel JFETs are general-purpose

and high-frequency amplifiers for a wide range of applications.

These devices feature low leakage (I_GSS< 100 pA).

capability. The J/SSTJ210 Series is available in tape-and-reel

for automated assembly (see Packaging Information).

The TO-226AA (TO-92) plastic package, provides low cost

while the TO-236 (SOT-23) package provides surface-mount

For similar dual products, see the 2N5911/5912 and U440/441

data sheets.

TO-226AA

(TO-92)

TO-236

(SOT-23)

SSTJ211 (Z1)*

SSTJ212 (Z2)*

J210

J211

J212

*Marking Code for TO-236

Top View

For applications information see AN104.

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-1

12 3 4 5 6 7

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