生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.90.00.00 |
风险等级: | 5.08 | 配置: | SINGLE |
FET 技术: | JUNCTION | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 135 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J211-TR1 | VISHAY |
获取价格 |
Transistor | |
J211TR2 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211TR3 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TR3-E3 | VISHAY |
获取价格 |
Transistor | |
J211TR4 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TR5 | VISHAY |
获取价格 |
Transistor | |
J211-TR6 | VISHAY |
获取价格 |
Transistor | |
J211-TR6-E3 | VISHAY |
获取价格 |
Transistor | |
J212 | Linear Systems |
获取价格 |
LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER | |
J212 | NJSEMI |
获取价格 |
GENERAL PURPOSE AMPS |