Datasheet > J212

J212

更新时间： 2024-09-26 22:33:27

品牌	Logo	应用领域
CALOGIC		/
页数	文件大小	规格书
2页	27K
描述
N-Channel JFET

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数据手册

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J212 数据手册

N-Channel JFET

CORPORATION

J210 – J212 / SSTJ210 – SSTJ212

FEATURES

DESCRIPTION

Low Noise

Low Leakage

High Power Gain

The J210 Series is an N-Channel JFET single device

encapsulated in a TO-92 plastic package well suited for

automated assembly. The device features low leakage,

typically under 2 pA, low noise, under 10 nano volts per

square hertz at 10 hertz and high gain. This series is

excellent for mixer, oscillators and amplifier applications.

•

APPLICATIONS

General Purpose Amplifiers

VHF/UHF Amplifiers

Mixers

Oscillators

•

ORDERING INFORMATION

•

Part

Package

Temperature Range

•

J210-11

SSTJ210-11 Plastic SOT-23

Plastic TO-92 Package

-55^oC to +135^oC

PIN CONFIGURATION

SOT-23

TO-92

PRODUCT MARKING (SOT-23)

CJ1

SSTJ210

SSTJ211

SSTJ212

Z10

Z11

Z12

DRAIN

SOURCE

GATE

BOTTOM VIEW

中文翻译

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与J212相关器件

型号	品牌	获取价格	描述	数据表
J212_SOT-23	MICROSS	获取价格	N-CHANNEL JFET
J212_TO-92	MICROSS	获取价格	N-CHANNEL JFET
J212D26Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212D27Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212D74Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212D75Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212-E3	VISHAY	获取价格	Transistor
J212J05Z	TI	获取价格	RF SMALL SIGNAL
J212J18Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212J18Z	TI	获取价格	RF SMALL SIGNAL