生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.61 | 配置: | SINGLE |
FET 技术: | JUNCTION | JEDEC-95代码: | TO-226AA |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 135 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J212L-E3 | VISHAY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J212LTA | TEMIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J212LTR | TEMIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J212LTR1 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-2 | |
J212TA | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J212-TA13 | VISHAY |
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Transistor | |
J212-TA13-E3 | VISHAY |
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Transistor | |
J212-TA-E3 | VISHAY |
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Transistor | |
J212TR1 | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J212-TR1 | VISHAY |
获取价格 |
Transistor |