生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.63 | 其他特性: | LOW NOISE |
配置: | SINGLE | FET 技术: | JUNCTION |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J212L | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-2 | |
J212L-1-18 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L18 | VISHAY |
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Si, RF SMALL SIGNAL, FET, TO-226AA | |
J212L-18 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J212L18-1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L-1TA | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L-1TR1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L-2-18 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L-2TA | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L-2TR1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |