Datasheet > J212D74Z

J212D74Z

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
13页	596K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92

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J212D74Z 数据手册

MMBFJ210

MMBFJ211

MMBFJ212

J210

J211

J212

TO-92

SOT-23

Mark: 62V / 62W / 62X

NOTE: Source & Drain

are interchangeable

N-Channel RF Amplifier

This device is designed for HF/VHF mixer/amplifier and

applications where Process 50 is not adequate. Sufficient

gain and low noise for sensitive receivers. Sourced from

Process 90.

Absolute Maximum Ratings*

TA= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

- 25

V_GS

Gate-Source Voltage

I_GF

Forward Gate Current

Operating and Storage Junction Temperature Range

-55 to +150

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA= 25°C unless otherwise noted

Max

Symbol

Characteristic

Units

J210-212

*MMBFJ210-212

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

225

1.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

J210/J211/J212/MMBFJ210/J211/J212, Rev A

12 3 4 5 6 7...13

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