是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | FET 技术: | JUNCTION |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最高工作温度: | 125 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J212J05Z | TI |
获取价格 |
RF SMALL SIGNAL | |
J212J18Z | FAIRCHILD |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
J212J18Z | TI |
获取价格 |
RF SMALL SIGNAL | |
J212L | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-2 | |
J212L-1-18 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L18 | VISHAY |
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Si, RF SMALL SIGNAL, FET, TO-226AA | |
J212L-18 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J212L18-1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L-1TA | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J212L-1TR1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |