J212

更新时间： 2024-01-12 20:46:28

品牌	Logo	应用领域
MICROSS		晶体晶体管
页数	文件大小	规格书
1页	271K
描述
Linear Systems replaces discontinued Siliconix J212

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中文翻译

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技术参数
数据手册

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J212 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	FET 技术：	JUNCTION
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

J212 数据手册

J212

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix J212

FEATURES

The J212 is a n-channel JFET General Purpose

DIRECT REPLACEMENT FOR SILICONIX J212

HIGH GAIN

HIGH INPUT IMPEDANCE

LOW INPUT CAPACITANCE

amplifier with low noise and low leakage.

g_fs= 7000µmho MIN

I_GSS= 100pA max

C_iss= 5pF

The SOT-23 package is well suited for cost sensitive

applications and mass production.

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

(See Packaging Information).

Maximum Temperatures

Storage Temperature

J212 Benefits:

‐55°C to +150°C

‐55°C to +135°C

High gain

Low Leakage

Low Noise

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Derating over temperature

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain Voltage or Gate to Source Voltage

360mW

3.27 mW/°C

J212 Applications:

General Purpose Amplifiers

UHV / VHF Amplifiers

Mixers

10mA

Oscillators

‐25V

J212 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

I_DSS

I_GSS

I_G

CHARACTERISTIC

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

MIN

‐25

‐4

‐‐

TYP.

‐‐

MAX

‐‐

‐6

‐100

‐‐

UNITS

CONDITIONS

V_DS= 0V, I_G= ‐1µA

V_DS= 15V, I_D= 1nA

V_DS= 15V, V_GS= 0V

V_DS= 0V, V_GS= ‐15V

V_DS= 10V, I_D= 1mA

I_G= 1mA, V_DS= 0V

Drain to Source Saturation Current (Note 2)

Gate Reverse Current (Note 3)

Gate Operating Current (Note 3)

Drain to Source On Resistance

‐‐

‐10

‐‐

r_DS(on)

J212 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

CHARACTERISTIC

Forward Transconductance

Output Conductance

MIN

7000

‐‐

TYP.

‐‐

MAX

12000

200

UNITS

µmho

CONDITIONS

V_DS= 15V, V_GS= 0V , f = 1kHz

g_os

Click To Buy

C_iss

C_rss

e_n

Input Capacitance

Reverse Transfer Capacitance

Equivalent Noise Voltage

‐‐

V_DS= 15V, V_GS= 0V , f = 1MHz

nV/√Hz

V_DS= 15V, V_GS= 0V , f = 1kHz

J212 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_DD= 10V

V_GS(H) = 0V

Turn On Rise Time

t_d(off)

t_f

Turn Off Time

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which J212 serviceability may be impaired.

Note 2 ‐ Pulse test duration = 2ms

Note 3 – Approximately doubles for every 10°C increase in T_A

Micross Components Europe

Available Packages:

SOT-23 (Top View)

J212 in SOT-23

J212 in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

中文翻译

下载PDF

与J212相关器件

型号	品牌	获取价格	描述	数据表
J212_SOT-23	MICROSS	获取价格	N-CHANNEL JFET
J212_TO-92	MICROSS	获取价格	N-CHANNEL JFET
J212D26Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212D27Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212D74Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212D75Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212-E3	VISHAY	获取价格	Transistor
J212J05Z	TI	获取价格	RF SMALL SIGNAL
J212J18Z	FAIRCHILD	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
J212J18Z	TI	获取价格	RF SMALL SIGNAL

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