生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.61 | 其他特性: | LOW NOISE |
配置: | SINGLE | FET 技术: | JUNCTION |
最高频带: | ULTRA HIGH FREQUENCY BAND | JEDEC-95代码: | TO-226AA |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J211LTR1 | VISHAY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-2 | |
J211TA | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TA | VISHAY |
获取价格 |
Transistor | |
J211-TA13 | VISHAY |
获取价格 |
Transistor | |
J211TR1 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TR1 | VISHAY |
获取价格 |
Transistor | |
J211TR2 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211TR3 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TR3-E3 | VISHAY |
获取价格 |
Transistor | |
J211TR4 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |