是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | FET 技术: | JUNCTION |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J211TR1 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TR1 | VISHAY |
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Transistor | |
J211TR2 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211TR3 | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TR3-E3 | VISHAY |
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Transistor | |
J211TR4 | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J211-TR5 | VISHAY |
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Transistor | |
J211-TR6 | VISHAY |
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Transistor | |
J211-TR6-E3 | VISHAY |
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Transistor | |
J212 | Linear Systems |
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LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER |