IXYH75N65C3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXYH) Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
25
42
S
Cies
Coes
Cres
3450
307
70
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
123
24
nC
nC
nC
IC = 75A, VGE = 15V, VCE = 0.5 • VCES
60
td(on)
tri
27
67
ns
ns
1 - Gate
2,4 - Collector
3 - Emitter
Inductive load, TJ = 25°C
IC = 60A, VGE = 15V
Eon
td(off)
tfi
2.8
93
mJ
ns
VCE = 400V, RG = 3
50
ns
Note 2
Eof
1.0
mJ
f
td(on)
tri
26
57
ns
ns
Inductive load, TJ = 150°C
IC = 60A, VGE = 15V
Eon
td(off)
tfi
3.3
108
58
mJ
ns
VCE = 400V, RG = 3
ns
Note 2
Eoff
1.3
mJ
RthJC
RthCS
0.20 °C/W
°C/W
0.21
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 50A, VGE = 0V, Note 1
2.5
V
V
TJ = 150°C
1.8
IRM
trr
TJ = 150°C
TJ = 150°C
45
150
A
ns
IF = 50A, VGE = 0V, -diF/dt = 900A/μs,
VR = 300V
RthJC
0.45 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537