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IXYH75N65C3H1 PDF预览

IXYH75N65C3H1

更新时间: 2024-03-25 22:01:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 264K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYH75N65C3H1 数据手册

 浏览型号IXYH75N65C3H1的Datasheet PDF文件第1页浏览型号IXYH75N65C3H1的Datasheet PDF文件第3页浏览型号IXYH75N65C3H1的Datasheet PDF文件第4页浏览型号IXYH75N65C3H1的Datasheet PDF文件第5页浏览型号IXYH75N65C3H1的Datasheet PDF文件第6页浏览型号IXYH75N65C3H1的Datasheet PDF文件第7页 
IXYH75N65C3H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXYH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
25  
42  
S
Cies  
Coes  
Cres  
3450  
307  
70  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
123  
24  
nC  
nC  
nC  
IC = 75A, VGE = 15V, VCE = 0.5 • VCES  
60  
td(on)  
tri  
27  
67  
ns  
ns  
1 - Gate  
2,4 - Collector  
3 - Emitter  
Inductive load, TJ = 25°C  
IC = 60A, VGE = 15V  
Eon  
td(off)  
tfi  
2.8  
93  
mJ  
ns  
VCE = 400V, RG = 3  
50  
ns  
Note 2  
Eof  
1.0  
mJ  
f
td(on)  
tri  
26  
57  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 60A, VGE = 15V  
Eon  
td(off)  
tfi  
3.3  
108  
58  
mJ  
ns  
VCE = 400V, RG = 3  
ns  
Note 2  
Eoff  
1.3  
mJ  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
0.21  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 50A, VGE = 0V, Note 1  
2.5  
V
V
TJ = 150°C  
1.8  
IRM  
trr  
TJ = 150°C  
TJ = 150°C  
45  
150  
A
ns  
IF = 50A, VGE = 0V, -diF/dt = 900A/μs,  
VR = 300V  
RthJC  
0.45 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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