Datasheet > IXFT180N20X3HV

IXFT180N20X3HV

更新时间： 2024-02-16 08:39:45

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	260K
描述
Power Field-Effect Transistor,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXFT180N20X3HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.33	Base Number Matches：	1

IXFT180N20X3HV 数据手册

IXFT180N20X3HV

IXFH180N20X3

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

g_fs

V_DS= 10V, I_D= 60A, Note 1

Gate Input Resistance

120

R_Gi

1.5



C_iss

C_oss

C_rss

10.3

1.7

V_GS= 0V, V_DS= 25V, f = 1MHz

5.2

Effective Output Capacitance

C_o(er)

C_o(tr)

810

Energy related

Time related

V_GS= 0V

_DS= 0.8 • V_DSS

2540

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

100

R_G= 5 (External)

Q_g(on)

Q_gs

154

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

R_thJC

R_thCS

0.17 C/W

C/W

TO-247

0.21

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

I_S

V_GS= 0V

180

I_SM

V_SD

Repetitive, pulse Width Limited by T_JM

I_F= 100A, V_GS= 0V, Note 1

720

1.4

t_rr

Q_RM

I_RM

120

550

I_F= 90A, -di/dt = 100A/μs

nC

V_R= 100V

Note 1. Pulse test, t  300s, duty cycle, d 2%.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

6,771,478B2 7,071,537

123 4 5 6

下载PDF

与IXFT180N20X3HV相关器件

型号	品牌	描述	获取价格	数据表
IXFT18N100Q3	IXYS	HiperFETTM Power MOSFETs Q3-Class	获取价格
IXFT18N100Q3	LITTELFUSE	Q3级系列功率MOSFET为最终用户提供具有一流功率开关性能、出色热特性、强大器件耐用性和	获取价格
IXFT18N90P	IXYS	Polar Power MOSFET HiPerFET	获取价格
IXFT18N90P	LITTELFUSE	功能与特色: 优点: 应用:	获取价格
IXFT20N100P	IXYS	Polar Power MOSFET HiPerFET	获取价格
IXFT20N100P	LITTELFUSE	功能与特色: 优点: 应用:	获取价格