Datasheet > IS71V16F32GSB08-7070BI

IS71V16F32GSB08-7070BI

更新时间： 2024-11-11 20:05:19

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
49页	198K
描述
Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, BGA-73

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IS71V16F32GSB08-7070BI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	8 X 11.60 MM, 0.80 MM PITCH, BGA-73	针数：	73
Reach Compliance Code：	compliant	HTS代码：	8542.32.00.71
风险等级：	5.92	其他特性：	SRAM ORGANIZED AS 512K X 16; FLASH IS ALSO CONFIGURABLE AS 4M X 8
JESD-30 代码：	R-PBGA-B73	JESD-609代码：	e0
长度：	11.6 mm	内存密度：	33554432 bit
内存集成电路类型：	MEMORY CIRCUIT	内存宽度：	16
功能数量：	1	端子数量：	73
字数：	2097152 words	字数代码：	2000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	2MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大供电电压 (Vsup)：	3.1 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	8 mm	Base Number Matches：	1

IS71V16F32GSB08-7070BI 数据手册

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IS71V08F32GSx08

IS71V16F32GSx08

3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip

Package (MCP) — 32 Mbit Simultaneous Operation Flash

Memory and 8 Mbit Static RAM

ISSI

PRELIMINARY INFORMATION

OCTOBER 2002

• Erase Algorithms:

MCP FEATURES

Automatically preprograms/erases the flash memory

entirely, or by sector

• Power supply voltage 2.7V to 3.1V

• High performance:

• Program Algorithms:

Flash: 70ns maximum access time

SRAM: 70ns maximum access time

Automatically writes and verifies data at specified

address

• Package: 73-ball BGA

• Operating Temperature: -40C to +85C

• Hidden ROM Region:

256 byte with a Factory-serialized secure electronic

serial number (ESN), which is accessible through a

command sequence

FLASH FEATURES

• Data Polling and Toggle Bit:

• Power Dissipation:

Allow for detection of program or erase cycle comple-

tion

Read Current at 1 Mhz: 4 mA maximum

Read Current at 5 Mhz:18 mA maximum

Sleep Mode: 5 µA maximum

• Ready-Busy output (RY/BY)

Detection of program or erase cycle completion

• User Configurable Banks

- Bank A : 4 Mbit (8KB x 8 and 64KB x 7)

- Bank B : 12 Mbit (64KB x 24)

- Bank C : 12 Mbit (64KB x 24)

- Bank D : 4 Mbit (64KB x 8 )

User chooses two virtual banks from a combination

of four physical banks

• Over 100,000 write/erase cycles

• Low supply voltage (Vccf ≤ 2.5V) inhibits writes

• Top or Bottom Boot

• WP/ACC input pin:

If V^IL, allows partial protection of boot sectors

If VIH, allows removal of boot sector protection

If Vacc, program time is improved

• Simultaneous R/W Operations (dual virtual bank):

Zero latency between read and write operations; Data

can be programmed or erased in one bank while data

is simultaneously being read from the other bank

SRAM FEATURES (8 Mb density)

• Low-Power Mode:

• Power Dissipation:

A period of no activity causes flash to enter a

low-power state

Operating: 25 mA maximum

Standby: 15 µA maximum

• Erase Suspend/Resume:

Suspends of erase activity to allow a read in the

same bank

• Chip Selects: CE1s, CE2s

• Power down feature using CE1s, or CE2s or

UBs or LBs

• Sector Erase Architecture:

8 sectors of 4K words each and 63 sectors of 32K words

each in Word mode, or 8 sectors of 8K bytes each and 63

sectors of 64K bytes each in Byte mode. Any combina-

tion of sectors, or the entire flash can be simulta-

neously erased

• Data retention supply voltage: 1.2 to 3.1 volt

• Byte data control: LBs (DQ0–DQ7), UBs

(DQ8–DQ15) with x16 version

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00B

10/21/02

12 3 4 5 6 7...49

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与IS71V16F32GSB08-7070BI相关器件

型号	品牌	获取价格	描述	数据表
IS71V16F32GST04-7070BI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA59, 7 X 9 MM, 0.80 MM PITCH, FBGA-59
IS71V16F64GS08-7085AI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA101, 11 X 12 MM, BGA-101
IS71V16F64GS08-8570AI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA101, 11 X 12 MM, BGA-101
IS71V16F64GS08-8570BI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, BGA-73
IS71VPCF16KS04-7085MI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA56, 7.20 X 7 MM, 0.80 MM PITCH, MINI, BGA-56
IS71VPCF16NS04-8585FI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, MINI, BGA-69
IS71VPCF16PS04-8585FI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, MINI, BGA-69
IS71VPCF16QS04-7085MI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA56, 7.20 X 7 MM, 0.80 MM PITCH, MINI, BGA-56
IS71VPCF32AS04-7070BI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, FBGA-73
IS71VPCF32AS04-7085BI	ISSI	获取价格	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, FBGA-73

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