Datasheet > IS66WVC2M16ALL-7010BLI-TR

IS66WVC2M16ALL-7010BLI-TR

更新时间： 2024-11-14 22:55:47

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
67页	1234K
描述
IC PSRAM 32M PARALLEL 54VFBGA

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IS66WVC2M16ALL-7010BLI-TR 数据手册

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IS66WVC2M16ALL

32Mb Async/Page/Burst CellularRAM 1.5

Overview

The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access

Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and

Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be

operated in a standard asynchronous mode and high performance burst mode. The die has separate power

rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Features

 Single device supports asynchronous , page,

and burst operation

 Mixed Mode supports asynchronous write and

synchronous read operation

 Low Power Consumption

 Asynchronous Operation < 25 mA

 Intrapage Read < 18mA

 Burst operation < 35 mA (@104Mhz)

 Standby < 150 uA(max.)

 Dual voltage rails for optional performance

 VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

 Asynchronous mode read access : 70ns

Interpage Read access : 70ns

 Deep power-down (DPD) < 3uA (Typ)

 Low Power Feature

 Reduced Array Refresh

 Temperature Controlled Refresh

 Deep power-down (DPD) mode

 Operation Frequency up to 104Mhz

 Operating temperature Range

Industrial -40°C~85°C

Intrapage Read access : 20ns

 Burst mode for Read and Write operation

 4, 8, 16,32 or Continuous

 Package: 54-ball VFBGA

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com – SRAM@issi.com

Rev.A | June 2011

12 3 4 5 6 7...67

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与IS66WVC2M16ALL-7010BLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS66WVC2M16ALL-7013BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, MO-207, VFBGA-54
IS66WVC2M16EALL-7008BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVC2M16EALL-7010BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVC2M16EALL-7010BLI-TR	ISSI	获取价格	IC PSRAM 32MBIT 70NS 54BGA
IS66WVC2M16ECLL-7008BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVC2M16ECLL-7010BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVC2M16ECLL-7010BLI-TR	ISSI	获取价格	Pseudo Static RAM,
IS66WVC4M16ALL-7010BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, MO-207, VFBGA-54
IS66WVC4M16EALL-7010BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVD204816ALL-7010BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 8 X 6 MM, MO-207, VFBGA-54

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