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IS66WVC1M16EALL-7008BLI PDF预览

IS66WVC1M16EALL-7008BLI

更新时间： 2024-11-14 14:51:39
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路
页数 文件大小 规格书
68页 1659K
描述
Pseudo Static RAM, 1MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54

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IS66WVC1M16EALL-7008BLI 技术参数

生命周期：Active包装说明：VFBGA,
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.78
Is Samacsys：N最长访问时间：70 ns
JESD-30 代码：R-PBGA-B54长度：8 mm
内存密度：16777216 bit内存集成电路类型：PSEUDO STATIC RAM
内存宽度：16功能数量：1
端子数量：54字数：1048576 words
字数代码：1000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
座面最大高度：1 mm最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
宽度：6 mmBase Number Matches：1

IS66WVC1M16EALL-7008BLI 数据手册

 浏览型号IS66WVC1M16EALL-7008BLI的Datasheet PDF文件第2页浏览型号IS66WVC1M16EALL-7008BLI的Datasheet PDF文件第3页浏览型号IS66WVC1M16EALL-7008BLI的Datasheet PDF文件第4页浏览型号IS66WVC1M16EALL-7008BLI的Datasheet PDF文件第5页浏览型号IS66WVC1M16EALL-7008BLI的Datasheet PDF文件第6页浏览型号IS66WVC1M16EALL-7008BLI的Datasheet PDF文件第7页 
IS66WVC1M16EALL  
IS67WVC1M16EALL  
16Mb Async/Page/Burst CellularRAM 1.5  
Overview  
The IS66WVC1M16EALL and IS67WVC1M16EALL is an integrated memory device containing 16Mbit Pseudo  
Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device  
includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of  
the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device  
can be operated in a standard asynchronous mode and high performance burst mode. The die has separate  
power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.  
Features  
Single device supports asynchronous , page,  
and burst operation  
Mixed Mode supports asynchronous write and  
synchronous read operation  
Low Power Consumption  
Asynchronous Operation < 30 mA  
Intrapage Read < 20mA  
Burst operation < 45 mA (@133Mhz)  
Standby < 80 uA(max.)  
Dual voltage rails for optional performance  
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  
Asynchronous mode read access : 70ns  
Interpage Read access : 70ns  
Intrapage Read access : 25ns  
Burst mode for Read and Write operation  
4, 8, 16,32 or Continuous  
Deep power-down (DPD) < 3uA (Typ)  
Low Power Feature  
Reduced Array Refresh  
Temperature Controlled Refresh  
Deep power-down (DPD) mode  
Operation Frequency up to 133Mhz  
Operating temperature Range  
Industrial: -40°C~85°C  
Automotive A1: -40°C~85°C  
Package: 54-ball VFBGA  
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its  
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services  
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information  
and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or  
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or  
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to  
its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
1
www.issi.com – SRAM@issi.com  
Rev. A1 | Oct. 2016  
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IS66WVC2M16ALL-7008BLI ISSI

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IS66WVC2M16ALL-7010BLI-TR ISSI

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IS66WVC2M16ALL-7013BLI ISSI

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IS66WVC2M16EALL-7008BLI ISSI

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 		Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVC2M16EALL-7010BLI ISSI

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 		Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-54
IS66WVC2M16EALL-7010BLI-TR ISSI

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