Datasheet > IS62WV102416FALL-55TLI

IS62WV102416FALL-55TLI

更新时间： 2024-11-07 07:35:51

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
17页	671K
描述
Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS62WV102416FALL-55TLI 技术参数

生命周期：	Active	包装说明：	TSOP1,
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.41
风险等级：	5.73	最长访问时间：	55 ns
JESD-30 代码：	R-PDSO-G48	长度：	18.4 mm
内存密度：	16777216 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	16	功能数量：	1
端子数量：	48	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	2.2 V
最小供电电压 (Vsup)：	1.65 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
宽度：	12 mm	Base Number Matches：	1

IS62WV102416FALL-55TLI 数据手册

浏览型号IS62WV102416FALL-55TLI的Datasheet PDF文件第2页

浏览型号IS62WV102416FALL-55TLI的Datasheet PDF文件第3页

浏览型号IS62WV102416FALL-55TLI的Datasheet PDF文件第4页

浏览型号IS62WV102416FALL-55TLI的Datasheet PDF文件第5页

浏览型号IS62WV102416FALL-55TLI的Datasheet PDF文件第6页

浏览型号IS62WV102416FALL-55TLI的Datasheet PDF文件第7页

IS62WV102416FALL/BLL

IS65WV102416FALL/BLL

JANUARY 2017

1Mx16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES

DESCRIPTION



High-speed access time: 45ns, 55ns

CMOS low power operation

The ISSI IS62/65WV102416FALL/FBLL are high-speed,

low power, 16M bit static RAMs organized as 1024K words

by 16 bits. It is fabricated using ISSI's high-performance

CMOS technology.

– Operating Current: 36mA (max.)

– CMOS standby Current: 5.8uA (typ.)

TTL compatible interface levels

Single power supply

This highly reliable process coupled with innovative circuit

design techniques, yields high-performance and low power

consumption devices. When CS1# is HIGH (deselected) or

when CS2 is LOW (deselected) or when CS1# is LOW,

CS2 is HIGH and both LB# and UB# are HIGH, the device

assumes a standby mode at which the power dissipation

can be reduced down with CMOS input levels.



–1.65V-2.2V VDD (IS62/65WV102416FALL)

– 2.2V-3.6V VDD (IS62/65WV102416FBLL)

Three state outputs



Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE#) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB#) and Lower Byte (LB#)

access.

Commercial, Industrial and Automotive

temperature support

Lead-free available



The IS62/65WV102416FALL/FBLL are packaged in the

JEDEC standard 48-pin mini BGA (6mm x 8mm) and 48-Pin

TSOP (TYPE I).

FUNCTIONAL BLOCK DIAGRAM

1M x 16

MEMORY

ARRAY

DECODER

A0 – A19(20)

VDD

GND

I/O0 – I/O7

Lower Byte

I/O

DATA

COLUMN I/O

I/O8 – I/O15

CIRCUIT

Upper Byte

BYTE#

CS2

CS1#

OE#

CONTROL

CIRCUIT

WE#

UB#

LB#

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

01/05/2017

12 3 4 5 6 7...17

中文翻译

下载PDF

与IS62WV102416FALL-55TLI相关器件

型号	品牌	获取价格	描述	数据表
IS62WV102416FBLL-55TLI	ISSI	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48
IS62WV10248ALL-70B	ISSI	获取价格	Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48
IS62WV10248ALL-70BI	ISSI	获取价格	Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48
IS62WV10248ALL-70T	ISSI	获取价格	Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, TSOP2-44
IS62WV10248BLL	ISSI	获取价格	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248BLL-55BI	ISSI	获取价格	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248BLL-55BLI	ISSI	获取价格	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248BLL-55TI	ISSI	获取价格	Standard SRAM, 1MX8, 55ns, CMOS, PDSO44, TSOP2-44
IS62WV10248BLL-70B	ISSI	获取价格	Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48
IS62WV10248BLL-70BI	ISSI	获取价格	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

与IS62WV102416FALL-55TLI相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

IS62WV102416FALL-55TLI

IS62WV102416FALL-55TLI 技术参数

IS62WV102416FALL-55TLI 数据手册

与IS62WV102416FALL-55TLI相关器件

与IS62WV102416FALL-55TLI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS62WV102416FALL-55TLI

IS62WV102416FALL-55TLI 技术参数

IS62WV102416FALL-55TLI 数据手册

与IS62WV102416FALL-55TLI相关器件

与IS62WV102416FALL-55TLI相关文章

您还可以找

您在本页遇到什么问题？