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IS62WV12816BLL-55BI

更新时间： 2024-09-15 22:51:43

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
17页	110K
描述
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

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中文翻译

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替代型号

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IS62WV12816ALL

IS62WV12816BLL

ISSI

128K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

JUNE2005

FEATURES

DESCRIPTION

• High-speed access time: 45ns, 55ns, 70ns

• CMOS low power operation

– 36 mW (typical) operating

TheISSIIS62WV12816ALL/IS62WV12816BLLare high-

speed, 2M bit static RAMs organized as 128K words by 16

bits. It is fabricated using ISSI's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.

– 9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBandUBareHIGH, thedeviceassumesastandbymode

at which the power dissipation can be reduced down with

CMOS input levels.

– 1.65V--2.2V V^DD(62WV12816ALL)

– 2.5V--3.6V V^DD(62WV12816BLL)

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

TheIS62WV12816ALLandIS62WV12816BLLarepackaged

intheJEDECstandard48-pinminiBGA(6mmx8mm)and

44-Pin TSOP (TYPE II).

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

128K x 16

MEMORY ARRAY

A0-A16

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

12 3 4 5 6 7...17

中文翻译

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IS62WV12816BLL-55BI 替代型号

型号	品牌	替代类型	描述	数据表
IS62WV12816BLL-55BLI	ISSI	类似代替	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

与IS62WV12816BLL-55BI相关器件

型号	品牌	获取价格	描述	数据表
IS62WV12816BLL-55BLI	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-55T	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-55TI	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-55TLI	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DBLL-45TLI	ISSI	获取价格	Standard SRAM, 128KX16, 45ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
IS62WV12816EALL	ISSI	获取价格	Three state outputs
IS62WV12816EBLL	ISSI	获取价格	Three state outputs
IS62WV12816EBLL-45BLI	ISSI	获取价格	Standard SRAM, 128KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI BGA-48
IS62WV12816EBLL-45TLI-TR	ISSI	获取价格	IC SRAM 2MBIT 45NS 44TSOP

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