Datasheet > IS62WV12816BLL-55B2LI

IS62WV12816BLL-55B2LI

更新时间： 2024-11-24 19:49:39

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
17页	511K
描述
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI, BGA-48

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IS62WV12816BLL-55B2LI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DSBGA
包装说明：	TFBGA, BGA48,6X8,30	针数：	48
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	Factory Lead Time：	8 weeks
风险等级：	5.53	最长访问时间：	55 ns
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B48
JESD-609代码：	e1	长度：	8 mm
内存密度：	2097152 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	16	湿度敏感等级：	3
功能数量：	1	端子数量：	48
字数：	131072 words	字数代码：	128000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128KX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装等效代码：	BGA48,6X8,30
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	2.7/3.3 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最小待机电流：	1 V
子类别：	SRAMs	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.5 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	宽度：	6 mm
Base Number Matches：	1

IS62WV12816BLL-55B2LI 数据手册

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IS62WV12816ALL

IS62WV12816BLL

128K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

NOVEMBER 2013

FEATURES

DESCRIPTION

• High-speed access time: 45ns, 55ns, 70ns

• CMOS low power operation

– 36 mW (typical) operating

TheISSIIS62WV12816ALL/IS62WV12816BLLare high-

speed, 2M bit static RAMs organized as 128K words by

16 bits. It is fabricated using ISSI's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

– 9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBandUBareHIGH, thedeviceassumesastandbymode

at which the power dissipation can be reduced down with

CMOS input levels.

– 1.65V--2.2V Vdd (62WV12816ALL)

– 2.5V--3.6V Vdd (62WV12816BLL)

• Fully static operation: no clock or refresh

Easymemory expansion is provided byusing Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

The IS62WV12816ALL and IS62WV12816BLL are

packaged in the JEDEC standard 48-pin mini BGA (6mm

x 8mm) and 44-Pin TSOP (TYPE II).

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

128K x 16

MEMORY ARRAY

A0-A16

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. J

11/19/2013

12 3 4 5 6 7...17

中文翻译

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与IS62WV12816BLL-55B2LI相关器件

型号	品牌	获取价格	描述	数据表
IS62WV12816BLL-55BI	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-55BLI	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-55T	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-55TI	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-55TLI	ISSI	获取价格	128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL	ISSI	获取价格	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DBLL-45TLI	ISSI	获取价格	Standard SRAM, 128KX16, 45ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
IS62WV12816EALL	ISSI	获取价格	Three state outputs
IS62WV12816EBLL	ISSI	获取价格	Three state outputs
IS62WV12816EBLL-45BLI	ISSI	获取价格	Standard SRAM, 128KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI BGA-48

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