IS62/65WV102416EALL
IS62/65WV102416EBLL
FEBRUARY 2016
1Mx16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
KEY FEATURES
DESCRIPTION
High-speed access time: 45ns, 55ns
CMOS low power operation
– Operating (typical):
The
IS62WV102416EALL/BLL and
IS65WV102416EALL/BLL are Low Power, 16M bit
static RAMs organized as 1024K words by 16bits. It is
-
10.8mW (1.8V), 18mW (3.0V)
fabricated using
's high-performance CMOS
– CMOS Standby (typical):
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
(deselected) or when
and are HIGH, the device assumes a standby
-
48 µW (1.8V), 90 µW (3.0V)
TTL compatible interface levels
Single power supply
–1.65V—1.98V Vdd (62/65WV102416EALL)
– 2.2V--3.6V Vdd (62/65WV102416EBLL)
Data control for upper and lower bytes
Industrial and Automotive temperature support
is HIGH (deselected) or when CS2 is low
is low , CS2 is high and both
mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs. The active LOW
Write Enable
the memory. A data byte allows Upper Byte
Lower Byte ( access.
The IS62WV102416EALL/BLL and
controls both writing and reading of
and
IS65WV102416EALL/BLL are packaged in the JEDEC
standard 48-pin BGA (6mm x 8mm).
BLOCK DIAGRAM
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reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
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a.) the risk of injury or damage has been minimized;
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Integrated Silicon Solution, Inc.- www.issi.com
1
Rev. A1
2/22/2016