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IS62LV256 PDF预览

IS62LV256

更新时间: 2024-01-03 04:29:04
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
9页 42K
描述
32K x 8 LOW VOLTAGE STATIC RAM

IS62LV256 数据手册

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®
IS62LV256  
ISSI  
32K x 8 LOW VOLTAGE STATIC RAM  
DECEMBER 2002  
FEATURES  
DESCRIPTION  
The ISSI IS62LV256 is a very high-speed, low power,  
32,768-word by 8-bit static RAM. It is fabricated using ISSI's  
high-performance CMOS double-metal technology.  
• Access time: 45, 70 ns  
• Low active power: 70 mW  
• Low standby power  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation is reduced to  
10 µW (typical) with CMOS input levels.  
— 45 µW CMOS standby  
• Fully static operation: no clock or refresh  
required  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
Easy memory expansion is provided by using an active LOW  
Chip Enable (CE) input and an active LOW Output Enable  
(OE) input. The active LOW Write Enable (WE) controls both  
writing and reading of the memory.  
The IS62LV256 is pin compatible with other 32K x 8 SRAMs  
in300-milSOJ,330-milplasticSOP,andTSOP(TypeINormal  
and Reverse Bent) packages.  
FUNCTIONAL BLOCK DIAGRAM  
256 X 1024  
MEMORY ARRAY  
A0-A14  
DECODER  
VCC  
GND  
I/O  
I/O0-I/O7  
DATA  
CIRCUIT  
COLUMN I/O  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. K  
1
12/11/02  

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