®
IS62LV25616LL
256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
ISSI
MAY 2001
FEATURES
DESCRIPTION
The ISSI IS62LV25616LL is high-speed, 4,194,304 bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovativecircuitdesigntechniques,yieldshigh-performance
and low power consumption devices.
• High-speed access time: 70 and 85 ns
• CMOS low power operation
– 135 mW (typical) operating
– 16.5 µW (typical) CMOS standby
• TTL compatible interface levels
WhenCEisHIGH(deselected)orwhenCEislowandbothLBand
UBareHIGH,thedeviceassumesastandbymodeatwhichthe
powerdissipationcanbereduceddownwithCMOSinputlevels.
•
Single 2.7V (min) to 3.15V (max) VCC power supply
• Fully static operation: no clock or refresh
required
EasymemoryexpansionisprovidedbyusingChipEnableand
OutputEnableinputs,CEandOE.TheactiveLOWWriteEnable
(WE)controlsbothwritingandreadingofthememory.Adatabyte
allowsUpperByte(UB)andLowerByte(LB)access.
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
The IS62LV25616LL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (8mm x 10mm
and 7.2mm x 8.7mm).
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (8mm x 10mm and 7.2mm x 8.7mm)
FUNCTIONAL BLOCK DIAGRAM
256K x 16
MEMORY ARRAY
A0-A17
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O
DATA
COLUMN I/O
CIRCUIT
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
05/04/01