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IS62LV256-45UI PDF预览

IS62LV256-45UI

更新时间: 2024-02-14 06:41:08
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 42K
描述
32K x 8 LOW VOLTAGE STATIC RAM

IS62LV256-45UI 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SOP, SOP28,.5Reach Compliance Code:unknown
风险等级:5.86最长访问时间:45 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.5封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.0002 A最小待机电流:3.13 V
子类别:SRAMs最大压摆率:0.045 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

IS62LV256-45UI 数据手册

 浏览型号IS62LV256-45UI的Datasheet PDF文件第2页浏览型号IS62LV256-45UI的Datasheet PDF文件第3页浏览型号IS62LV256-45UI的Datasheet PDF文件第4页浏览型号IS62LV256-45UI的Datasheet PDF文件第5页浏览型号IS62LV256-45UI的Datasheet PDF文件第6页浏览型号IS62LV256-45UI的Datasheet PDF文件第7页 
®
IS62LV256  
ISSI  
32K x 8 LOW VOLTAGE STATIC RAM  
DECEMBER 2002  
FEATURES  
DESCRIPTION  
The ISSI IS62LV256 is a very high-speed, low power,  
32,768-word by 8-bit static RAM. It is fabricated using ISSI's  
high-performance CMOS double-metal technology.  
• Access time: 45, 70 ns  
• Low active power: 70 mW  
• Low standby power  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation is reduced to  
10 µW (typical) with CMOS input levels.  
— 45 µW CMOS standby  
• Fully static operation: no clock or refresh  
required  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
Easy memory expansion is provided by using an active LOW  
Chip Enable (CE) input and an active LOW Output Enable  
(OE) input. The active LOW Write Enable (WE) controls both  
writing and reading of the memory.  
The IS62LV256 is pin compatible with other 32K x 8 SRAMs  
in300-milSOJ,330-milplasticSOP,andTSOP(TypeINormal  
and Reverse Bent) packages.  
FUNCTIONAL BLOCK DIAGRAM  
256 X 1024  
MEMORY ARRAY  
A0-A14  
DECODER  
VCC  
GND  
I/O  
I/O0-I/O7  
DATA  
CIRCUIT  
COLUMN I/O  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. K  
1
12/11/02  

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