Datasheet > IS61WV25632ALL

IS61WV25632ALL

更新时间： 2024-11-13 01:10:15

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
19页	494K
描述
TTL compatible inputs and outputs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS61WV25632ALL 数据手册

IS61WV25632ALL/ALS

IS61WV25632BLL/BLS

IS64WV25632BLL/BLS

256K x 32 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

PRELIMINARY INFORMATION

APRIL 2008

FEATURES

DESCRIPTION

The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx

are high-speed, 8M-bit static RAMs organized as 256K

words by 32 bits. It is fabricated using ISSI's high-per-

formance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.

• High-speed access times:

8, 10, 20 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with CE and OE op-

tions

• CE power-down

• Fully static operation: no clock or refresh

When CE is HIGH (deselected), the device assumes

a standby mode at which the power dissipation can be

reduced down with CMOS input levels.

required

Easymemory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of

the memory.

• TTL compatible inputs and outputs

• Single power supply

V^{d d}1.65V to 2.2V (IS61WV25632Axx)

speed = 20ns for V^{d d}1.65V to 2.2V

V^{d d}2.4V to 3.6V (IS61/64WV25632Bxx)

speed = 10ns for V^{d d}2.4V to 3.6V

speed = 8ns for V^{d d}3.3V + 5%

• Packages available:

The device is packaged in the JEDEC standard 90-ball

BGA (8mm x 13mm).

–

90-ball miniBGA (8mm x 13mm)

• Industrial and Automotive Temperature Support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

256K x 32

MEMORY ARRAY

A0-A17

DECODER

VDD

VSS

DQa-d

I/O

COLUMN I/O

DATA

CIRCUIT

CONTROL

CIRCUIT

BWa-d

CE2

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00B

04/23/08

12 3 4 5 6 7...19

中文翻译

下载PDF

与IS61WV25632ALL相关器件

型号	品牌	获取价格	描述	数据表
IS61WV25632ALS	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV25632BLL	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV25632BLL-10BLI	ISSI	获取价格	Standard SRAM, 256KX32, 10ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, BGA
IS61WV25632BLS	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV2568EDBLL	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10BI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10BLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10KLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10TI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10TLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

与IS61WV25632ALL相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61WV25632ALL

IS61WV25632ALL 数据手册

与IS61WV25632ALL相关器件

与IS61WV25632ALL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61WV25632ALL

IS61WV25632ALL 数据手册

与IS61WV25632ALL相关器件

与IS61WV25632ALL相关文章

您还可以找

您在本页遇到什么问题？