Datasheet > IS61WV2568EDBLL-10BLI

IS61WV2568EDBLL-10BLI

更新时间： 2024-09-25 00:56:23

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
14页	657K
描述
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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IS61WV2568EDBLL

IS64WV2568EDBLL

256K x 8 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH ECC

DECEMBER 2011

DESCRIPTION

FEATURES

Theꢀ ISSIꢀ IS61/64WV2568EDBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ

2,097,152-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ262,144ꢀwordsꢀbyꢀ

8ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀCMOSꢀ

technology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinno-

vativeꢀcircuitꢀdesignꢀtechniques,ꢀyieldsꢀhigh-performanceꢀ

andꢀlowꢀpowerꢀconsumptionꢀdevices.

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)ꢀ

CMOSꢀstandby

•ꢀ Singleꢀpowerꢀsupply

ꢀ —ꢀꢀV^ddꢀ2.4Vꢀtoꢀ3.6Vꢀ(10ꢀns)

—ꢀꢀV^ddꢀ3.3Vꢀ ꢀ10%ꢀ(8ꢀns)

WhenꢀCEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀaꢀ

standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-

ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ

required

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ

WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀ

theꢀmemory.ꢀꢀ

•ꢀ Threeꢀstateꢀoutputs

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection

TheꢀIS61/64WV2568EDBLLꢀisꢀꢀpackagedꢀinꢀtheꢀJEDECꢀ

standardꢀ44-pinꢀTSOP-II,ꢀ36-pinꢀSOJꢀandꢀ36-pinꢀMiniꢀBGAꢀ

(6mmꢀxꢀ8mm).

FUNCTIONAL BLOCK DIAGRAM

ECC Array

(256Kx4)

Memory Array

(256Kx8)

A0-A17

Decoder

I/O Data

Circuit

ECC

IO0-7

Column I/O

/CE

/OE

/WE

Control

Circuit

notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-

estꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-

ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ

unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀꢀ

Integrated Silicon Solution, Inc. — www.issi.comꢀ

Rev. A

11/08/2011

12 3 4 5 6 7...14

中文翻译

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与IS61WV2568EDBLL-10BLI相关器件

型号	品牌	获取价格	描述	数据表
IS61WV2568EDBLL-10KLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10TI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-10TLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-8BLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-8KLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV2568EDBLL-8TLI	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV3216BLL	ISSI	获取价格	32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV3216BLL-12BI	ISSI	获取价格	32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV3216BLL-12BLI	ISSI	获取价格	32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV3216BLL-12TI	ISSI	获取价格	32K x 16 HIGH-SPEED CMOS STATIC RAM

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