®
IS61NLP25636A/IS61NVP25636A
IS61NLP51218A/IS61NVP51218A
ISSI
256K x 36 and 512K x 18
9Mb, PIPELINE 'NO WAIT' STATE BUS
SRAM
JUNE 2006
FEATURES
DESCRIPTION
The 9 Meg 'NLP/NVP' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organizedas256Kwordsby36bitsand512K wordsby18
bits, fabricated with ISSI's advanced CMOS technology.
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control using
MODE input
Allsynchronousinputspassthroughregistersarecontrolled
byapositive-edge-triggeredsingleclockinput.Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH. In this state the internal
device will hold their previous values.
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
• JEDEC 100-pin TQFP, 165-ball PBGA and 119-
ball PBGA packages
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when WE is LOW.
Separate byte enables allow individual bytes to be written.
• Power supply:
NVP: VDD 2.5V ( 5ꢀ), VDDQ 2.5V ( 5ꢀ)
NLP: VDD 3.3V ( 5ꢀ), VDDQ 3.3V/2.5V ( 5ꢀ)
A burst mode pin (MODE) defines the order of the burst
sequence.WhentiedHIGH,theinterleavedburstsequence
is selected. When tied LOW, the linear burst sequence is
selected.
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
tKQ
Parameter
-250
2.6
4
-200
3.1
5
Units
ns
Clock Access Time
Cycle Time
tKC
ns
Frequency
250
200
MHz
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany
publishedinformationandbeforeplacingordersforproducts.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. B
06/27/06