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IS61DDB21M18A-300M3L PDF预览

IS61DDB21M18A-300M3L

更新时间： 2024-11-18 14:51:39
品牌 Logo 应用领域
美国芯成 - ISSI 时钟双倍数据速率静态存储器内存集成电路
页数 文件大小 规格书
29页 465K
描述
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

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IS61DDB21M18A-300M3L 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：BGA
包装说明：LBGA, BGA165,11X15,40针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41Factory Lead Time：10 weeks
风险等级：5.3Is Samacsys：N
最长访问时间：0.45 ns其他特性：PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：300 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B165JESD-609代码：e1
长度：17 mm内存密度：18874368 bit
内存集成电路类型：DDR SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：165字数：1048576 words
字数代码：1000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：1MX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LBGA
封装等效代码：BGA165,11X15,40封装形状：RECTANGULAR
封装形式：GRID ARRAY, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：1.5/1.8,1.8 V
认证状态：Not Qualified座面最大高度：1.4 mm
最大待机电流：0.28 A最小待机电流：1.7 V
子类别：SRAMs最大压摆率：0.55 mA
最大供电电压 (Vsup)：1.89 V最小供电电压 (Vsup)：1.71 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN SILVER COPPER端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40宽度：15 mm
Base Number Matches：1

IS61DDB21M18A-300M3L 数据手册

 浏览型号IS61DDB21M18A-300M3L的Datasheet PDF文件第2页浏览型号IS61DDB21M18A-300M3L的Datasheet PDF文件第3页浏览型号IS61DDB21M18A-300M3L的Datasheet PDF文件第4页浏览型号IS61DDB21M18A-300M3L的Datasheet PDF文件第5页浏览型号IS61DDB21M18A-300M3L的Datasheet PDF文件第6页浏览型号IS61DDB21M18A-300M3L的Datasheet PDF文件第7页 
IS61DDB21M18A  
IS61DDB251236A  
1Mx18, 512Kx36  
ADVANCED INFORMATION  
JULY 2012  
18Mb DDR-II (Burst 2) CIO SYNCHRONOUS SRAM  
FEATURES  
DESCRIPTION  
The 18Mb IS61DDB251236A and IS61DDB21M18A are  
synchronous, high-performance CMOS static random access  
memory (SRAM) devices. These SRAMs have a common I/O  
bus. The rising edge of K clock initiates the read/write  
operation, and all internal operations are self-timed. Refer to  
the Timing Reference Diagram for Truth Table for a  
description of the basic operations of these DDR-II (Burst of  
2) CIO SRAMs.  
512Kx36 and 1Mx18 configuration available.  
On-chip delay-locked loop (DLL) for wide data valid  
window.  
Common I/O read and write ports.  
Synchronous pipeline read with self-timed late write  
operation.  
Double Data Rate (DDR) interface for read and  
write input ports.  
Read and write addresses are registered on alternating rising  
edges of the K clock. Reads and writes are performed in  
double data rate.  
Fixed 2-bit burst for read and write operations.  
Clock stop support.  
The following are registered internally on the rising edge of  
the K clock:  
Two input clocks (K and K#) for address and control  
registering at rising edges only.  
Read/write address  
Read enable  
Write enable  
Byte writes for first burst address  
Data-in for first burst address  
Two input clocks (C and C#) for data output control.  
Two echo clocks (CQ and CQ#) that are delivered  
simultaneously with data.  
+1.8V core power supply and 1.5V to 1.8V VDDQ,  
used with 0.75V to 0.9V VREF.  
The following are registered on the rising edge of the K#  
clock:  
HSTL input and output interface.  
Registered addresses, write and read controls, byte  
writes, data in, and data outputs.  
Byte writes for second burst address  
Data-in for second burst address  
Full data coherency.  
Boundary scan using limited set of JTAG 1149.1  
functions.  
Byte writes can change with the corresponding data-in to  
enable or disable writes on a per-byte basis. An internal write  
buffer enables the data-ins to be registered one cycle after  
the write address. The first data-in burst is clocked one cycle  
later than the write command signal, and the second burst is  
timed to the following rising edge of the K# clock.  
Byte write capability.  
Fine ball grid array (FBGA) package:  
13mmx15mm and 15mmx17mm body size  
165-ball (11 x 15) array  
During the burst read operation, the data-outs from the first  
bursts are updated from output registers of the second rising  
edge of the C# clock (starting one and half cycles later after  
read command). The data-outs from the second bursts are  
updated with the third rising edge of the C clock. The K and  
K# clocks are used to time the data-outs whenever the C and  
C# clocks are tied high.  
Programmable impedance output drivers via 5x  
user-supplied precision resistor.  
The device is operated with a single +1.8V power supply and  
is compatible with HSTL I/O interfaces.  
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can  
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such  
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev. 00A  
1
7/5/2012  
1234567...29

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与IS61DDB21M18A-300M3L相关器件

型号 品牌 获取价格 描述 数据表
IS61DDB21M18A-333M3LI ISSI

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 		DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
IS61DDB21M36-250M3 ISSI

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 		36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
IS61DDB21M36-250M3L ISSI

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 		1MX36 DDR SRAM, 0.35ns, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-165
IS61DDB21M36-250M3LI ISSI

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 		IC,SYNC SRAM,DDR,1MX36,CMOS,BGA,165PIN,PLASTIC,
IS61DDB21M36A ISSI

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 		Clock stop support
IS61DDB22M18 ISSI

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 		36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
IS61DDB22M18-250M3 ISSI

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 		36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
IS61DDB22M18A ISSI

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 		Clock stop support
IS61DDB22M18A-250B4 ISSI

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 		DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165
IS61DDB22M18A-250B4L ISSI

获取价格

 		DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

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