是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | LBGA, BGA165,11X15,40 | 针数: | 165 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.3 |
Is Samacsys: | N | 最长访问时间: | 0.45 ns |
其他特性: | PIPELINED ARCHITECTURE | 最大时钟频率 (fCLK): | 250 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B165 |
JESD-609代码: | e0 | 长度: | 17 mm |
内存密度: | 18874368 bit | 内存集成电路类型: | DDR SRAM |
内存宽度: | 18 | 功能数量: | 1 |
端子数量: | 165 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX18 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LBGA |
封装等效代码: | BGA165,11X15,40 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 1.5/1.8,1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1.4 mm |
最大待机电流: | 0.27 A | 最小待机电流: | 1.7 V |
子类别: | SRAMs | 最大压摆率: | 0.5 mA |
最大供电电压 (Vsup): | 1.89 V | 最小供电电压 (Vsup): | 1.71 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS61DDB21M18A-300B4L | ISSI |
获取价格 |
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 | |
IS61DDB21M18A-300M3 | ISSI |
获取价格 |
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | |
IS61DDB21M18A-300M3I | ISSI |
获取价格 |
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | |
IS61DDB21M18A-300M3L | ISSI |
获取价格 |
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 | |
IS61DDB21M18A-333M3LI | ISSI |
获取价格 |
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 | |
IS61DDB21M36-250M3 | ISSI |
获取价格 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs | |
IS61DDB21M36-250M3L | ISSI |
获取价格 |
1MX36 DDR SRAM, 0.35ns, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-165 | |
IS61DDB21M36-250M3LI | ISSI |
获取价格 |
IC,SYNC SRAM,DDR,1MX36,CMOS,BGA,165PIN,PLASTIC, | |
IS61DDB21M36A | ISSI |
获取价格 |
Clock stop support | |
IS61DDB22M18 | ISSI |
获取价格 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |