Datasheet > IS42VM32400F-75BLI

IS42VM32400F-75BLI

更新时间： 2024-11-14 01:18:03

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
27页	451K
描述
1M x 32Bits x 4Banks Mobile Synchronous DRAM

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IS42VM32400F

1M x 32Bits x 4Banks Mobile Synchronous DRAM

Description

These IS42VM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These

products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and

output voltage levels are compatible with LVCMOS.

Features

JEDEC standard 1.8V power supply.

• Auto refresh and self refresh.

• All inputs and outputs referenced to the positive edge of the

system clock.

• All pins are compatible with LVCMOS interface.

• 4K refresh cycle / 64ms.

• Data mask function by DQM.

• Internal

4 banks operation.

• Programmable Burst Length and Burst Type.

- 1, 2, 4, 8 or Full Page for Sequential Burst.

- 4 or 8 for Interleave Burst.

• Burst Read Single Write operation.

• Special Function Support.

- PASR(Partial Array Self Refresh)

• Programmable CAS Latency : 2,3 clocks.

• Programmable Driver Strength Control

- Full Strength or 1/2, 1/4 of Full Strength

• Deep Power Down Mode.

- Auto TCSR(Temperature Compensated Self Refresh)

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - DRAM@issi.com

Rev. A | July 2010

12 3 4 5 6 7...27

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与IS42VM32400F-75BLI相关器件

型号	品牌	获取价格	描述	数据表
IS42VM32400G	ISSI	获取价格	All pins are compatible with LVCMOS interface
IS42VM32400G-6BLI	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42VM32400G-6BLI-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42VM32400G-75BI	ISSI	获取价格	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400G-75BLI	ISSI	获取价格	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400G-75BLI-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 90TFBGA
IS42VM32400H-6BLI	ISSI	获取价格	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400H-75BI	ISSI	获取价格	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400H-75BLI	ISSI	获取价格	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32800D	ISSI	获取价格	Sequential and Interleave

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