5秒后页面跳转
捷配首页

Datasheet > IS42VM32800D-10BL-TR
IS42VM32800D-10BL-TR PDF预览

IS42VM32800D-10BL-TR

更新时间： 2024-11-14 07:00:55
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
23页 502K
描述
Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90

阅读下载

中文翻译

获取价格

IS42VM32800D-10BL-TR 数据手册

 浏览型号IS42VM32800D-10BL-TR的Datasheet PDF文件第2页浏览型号IS42VM32800D-10BL-TR的Datasheet PDF文件第3页浏览型号IS42VM32800D-10BL-TR的Datasheet PDF文件第4页浏览型号IS42VM32800D-10BL-TR的Datasheet PDF文件第5页浏览型号IS42VM32800D-10BL-TR的Datasheet PDF文件第6页浏览型号IS42VM32800D-10BL-TR的Datasheet PDF文件第7页 
IS42VM83200D / IS42VM16160D / IS42VM32800D  
32Mx8, 16Mx16, 8Mx32  
256Mb Mobile Synchronous DRAM  
Preliminary Information  
AUGUST 2010  
DESCRIPTION  
FEATURES  
ISSI's 256Mb Mobile Synchronous DRAM achieves high-  
speed data transfer using pipeline architecture. All input  
and output signals refer to the rising edge of the clock  
input. Both write and read accesses to the SDRAM are  
burst oriented. The 256Mb Mobile Synchronous DRAM  
is designed to minimize current consumption making it  
ideal for low-power applications. Both TSOP and BGA  
packages are offered, including industrial grade products.  
•ꢀ Fully synchronous; all signals referenced to a  
positive clock edge  
•ꢀ Internal bank for hiding row access and pre-  
charge  
•ꢀ Programmable CAS latency: 2, 3  
•ꢀ Programmable Burst Length: 1, 2, 4, 8, and Full  
Page  
•ꢀ Programmable Burst Sequence:  
•ꢀ Sequential and Interleave  
•ꢀ Auto Refresh (CBR)  
KEY TIMING PARAMETERS  
-8(1)  
-10(2)  
Unit  
•ꢀ TCSR (Temperature Compensated Self Refresh)  
Parameter  
•ꢀ PASR (Partial Arrays Self Refresh): 1/16, 1/8,  
CLK Cycle Time  
CAS Latency = 3  
CAS Latency = 2  
CLK Frequency  
CAS Latency = 3  
CAS Latency = 2  
Access Time from CLK  
CAS Latency = 3  
CAS Latency = 2  
1/4, 1/2, and Full  
8
10  
12  
ns  
ns  
•ꢀ Deep Power Down Mode (DPD)  
•ꢀ Driver Strength Control (DS): 1/4, 1/2, and Full  
10  
125  
100  
100  
83  
Mhz  
Mhz  
OPTIONS  
•ꢀ Configurations:  
- 32M x 8  
- 16M x 16  
- 8M x 32  
•ꢀ Power Supply  
6
9
8
ns  
ns  
10  
IS42VMxxx – Vd d /Vd d q = 1.8V  
•ꢀ Packages:  
Notes:  
1. Available for x8/x16 only  
2. Available for x32 only  
x8 / x16 –TSOP II (54), BGA (54) [x16 only]  
x32 – TSOP II (86), BGA (90)  
•ꢀ Temperature Range:  
Commercial (0°C to +70°C)  
Industrial (–40 ºC to 85 ºC)  
ADDRESSING TABLE  
Parameter  
32M x 8  
16M x 16  
8M x 32  
Configuration  
8M x 8 x 4 banks  
8K/64ms  
A0-A12  
4M x 16 x 4 banks  
8K/64ms  
A0-A12  
2M x 32 x 4 banks  
4K/64ms  
A0-A11  
Refresh Count  
Row Addressing  
Column Addressing  
Bank Addressing  
Precharge Addressing  
A0-A9  
A0-A8  
A0-A8  
BA0, BA1  
A10  
BA0, BA1  
A10  
BA0, BA1  
A10  
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be  
expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated  
Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. - www.issi.com  
Rev. 00D  
1
08/06/2010  
1234567...23

中文翻译

下载PDF

与IS42VM32800D-10BL-TR相关器件

型号 品牌 获取价格 描述 数据表
IS42VM32800D-10TL ISSI

获取价格

 		Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800D-10TLI-TR ISSI

获取价格

 		Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86
IS42VM32800D-75BLI ISSI

获取价格

 		Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207,
IS42VM32800D-75TL ISSI

获取价格

 		Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800D-75TLI ISSI

获取价格

 		Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800E-6BLI ISSI

获取价格

 		IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800E-6BLI-TR ISSI

获取价格

 		IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800E-75BLI ISSI

获取价格

 		IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800E-75BLI-TR ISSI

获取价格

 		IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800K-6BLI ISSI

获取价格

 		Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, FBGA-90

与IS42VM32800D-10BL-TR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证